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首页> 外文期刊>Electronics Letters >To suppress dark current of high temperature /spl beta/-SiC/Si optoelectronic devices with porous silicon substrate
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To suppress dark current of high temperature /spl beta/-SiC/Si optoelectronic devices with porous silicon substrate

机译:抑制具有多孔硅衬底的高温/ spl beta / -SiC / Si光电器件的暗电流

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摘要

The suppression of high temperature dark current in a /spl beta/-SiC/Si optoelectronic device with a porous substrate has been studied. A pin structure was used to demonstrate the applicability. Experimental results show a 12-fold improvement in optical gain at 200/spl deg/C operating temperature for the sample prepared on a porous silicon substrate compared to the sample prepared on a Si substrate. The improvement is attributed to the suppression of dark current by the high resistivity and flexibility of the porous substrate.
机译:已经研究了在具有多孔衬底的/ spl beta / -SiC / Si光电子器件中抑制高温暗电流的方法。引脚结构用于证明其适用性。实验结果表明,与在硅衬底上制备的样品相比,在多孔硅衬底上制备的样品在200 / spl deg / C的工作温度下的光学增益提高了12倍。改善归因于多孔基板的高电阻率和柔性来抑制暗电流。

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