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The Mott transition and optimal performance of transparent conducting oxides in thin-film solar cells

机译：薄膜太阳能电池中透明导电氧化物的Mott转变和最佳性能

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The performance of thin-film solar cells is critically dependent upon the effective operation of transparent conducting oxide (TCO) layers, which play a significant role in both optical and electrical power transmission through these photovoltaic devices. In this article, we model the optical and electrical power transmission through TCO layers in thin-film solar cells as a function of both the electron carrier density, n, and its mobility, μ. The electrical and optical properties of the TCO layer are described by the simple Drude model of the degenerate free electron gas and the concomitant electromagnetic absorption due to skin-depth effects is thereby calculated. Above the critical carrier density for the composition-induced Mott Insulator-Conductor Transition, TCOs exhibit metallic-type conduction. However, with increasing electron (carrier) density above the transition, the optical transparency of the layer is significantly decreased. Importantly, in order to achieve high electrical conductivity whilst preserving high optical transparency of the TCO layer, electron mobilities need to be increased in preference to increasing electron densities. To reach higher carrier mobilities in any given TCO system, we propose that one should move the material close to the Mott transition. A model of ionized impurity scattering in indium tin oxide (ITO) at high carrier densities allows direct comparison of the μ-n relationship in real TCO layers to the total power absorption in such layers in thin-film solar devices. We determine that decreasing the electron density from 2.6 × 10~(21) cm~(-3) to 2 × 10~(21) cm~(-3) in such an ITO layer above the Mott critical density can decrease the total power absorption in the layer by a large amount (around 8% relative to the minimum theoretical absorption).
机译：薄膜太阳能电池的性能关键取决于透明导电氧化物（TCO）层的有效运行，该层在通过这些光伏设备的光功率和电能传输中均起着重要作用。在本文中，我们将薄膜太阳能电池中通过TCO层的光和电传输模型化为电子载流子密度n及其迁移率μ的函数。通过简并的自由电子气的Drude模型描述了TCO层的电学和光学特性，并由此计算了由于趋肤深度效应引起的电磁吸收。在组成诱导的莫特绝缘子-导体转变的临界载流子密度以上，TCO表现出金属型导电性。然而，随着跃迁以上的电子（载流子）密度的增加，该层的光学透明度显着降低。重要的是，为了在保持TCO层的高光学透明性的同时实现高电导率，需要优先于提高电子密度来提高电子迁移率。为了在任何给定的TCO系统中达到更高的运输能力，我们建议将材料移至接近Mott过渡的位置。在高载流子密度下铟锡氧化物（ITO）中的电离杂质散射模型可以直接比较真实TCO层中的μ-n关系与薄膜太阳能器件中此类层中的总功率吸收。我们确定在Mott临界密度以上的ITO层中将电子密度从2.6×10〜（21）cm〜（-3）降低到2×10〜（21）cm〜（-3）可以降低总功率层中的吸收量很大（相对于最小理论吸收量约8％）。

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  • 来源
    《Energy & environmental science》 |2012年第1期|p.5387-5391|共5页
  • 作者

    Daniel Slocombe; Adrian Porch; Michael Pepper; Peter P. Edwards;

  • 作者单位

    School of Engineering, Cardiff University, Queen's Buildings, The Parade,Cardiff, CF24 3AA, UK;

    rnSchool of Engineering, Cardiff University, Queen's Buildings, The Parade,Cardiff, CF24 3AA, UK;

    rnDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1H 0AH, UK;

    rnInorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford, 0X1 3QR, UK;

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