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首页> 外文期刊>Journal of materials science >An investigation of the influence of different transparent conducting oxide substrates/front contacts on the performance of CdS/CdTe thin-film solar cells
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An investigation of the influence of different transparent conducting oxide substrates/front contacts on the performance of CdS/CdTe thin-film solar cells

机译：研究不同的透明导电氧化物衬底/正面接触对CdS / CdTe薄膜太阳能电池性能的影响

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摘要

CdS/CdTe/Au thin film solar cells have been fabricated on different transparent conducting oxide (TCO) substrates/front contacts to study the influence of these different TCOs on the performance of the devices. The TCOs used were ZnO, ZnC:Al and SnO_2:F. Under dark condition, all three device structures of the type glass/TCO-CdS-CdTe/Au n-n hetero unction + Schottky barrier, show interesting rectifying behaviors with rectification factors (RF) in the range (10~(2.5)-10~(5.0)), Schottky barrier heights (Φ_B) greater than (0.69-0.81) eV, diode ideality factors (n) in the range (1.85-2.12), reverse saturation current densities (J_0) in the range (3.18× 10~(-6)-3.18 × 10~(-8)) A cm~(-2), series resistances (R_s) in the range (507-1114) Ω and shunt resistances (R_(sh)) in the range ((0.84-271) MΩ The device structures glass/SnO_2:F-CdS-CdTe/Au and glass/FTO/ZnO:Al-CdS-CdTe/Au show the best performance with equal J_0 of 3.18× 10~( -8)A cm~2, equal Φ_ B> 0.81 eV, RF of 10~(4.9) and 10~(5.0), n value of 2.01 and 2.12, R_s of 615 Ω and 507 Ω. And R_(sh) of 197 and 271 MΩ. Respectively. The device structure with ZnO shows the least performance. Under AM1.5 illumination, the device structure glass/SnO_2:F-CdS-CdTe/Au shows the best solar cell performance with open-circuit voltage of 630 mV, short-circuit current density of 23.5 mAcm~(-2), fill factor of 0.44 and conversion efficiency of 6.5%, and is followed by the device structure with ZnO:Al showing a conversion efficiency of 6.0%. Suggested energyrnband diagrams of the devices as well as possible reasons for the observed trends in performance are presented and discussed.
机译：CdS / CdTe / Au薄膜太阳能电池已经在不同的透明导电氧化物（TCO）基板/正面触点上制造，以研究这些不同的TCO对器件性能的影响。使用的TCO为ZnO，ZnC：Al和SnO_2：F。在黑暗条件下，玻璃/ TCO / n-CdS / n-CdTe / Au nn异质结+肖特基势垒的所有三种器件结构均显示出有趣的整流行为，其整流因子（RF）在（10〜（2.5） -10〜（5.0）），肖特基势垒高度（Φ_B）大于（0.69-0.81）eV，二极管理想因子（n）在（1.85-2.12）范围，反向饱和电流密度（J_0）在（3.18）范围内×10〜（-6）-3.18×10〜（-8））A cm〜（-2），串联电阻（R_s）在（507-1114）Ω范围内，分流电阻（R_（sh））在范围（（0.84-271）MΩ器件结构玻璃/ SnO_2：F / n-CdS / n-CdTe / Au和玻璃/ FTO / ZnO：Al / n-CdS / n-CdTe / Au表现出最佳的性能J_0为3.18×10〜（-8）A cm〜2，等于Φ_B> 0.81 eV，RF为10〜（4.9）和10〜（5.0），n值为2.01和2.12，R_s为615Ω和507Ω分别为197和271MΩ的R_（sh），具有ZnO的器件结构表现最差；在AM1.5照明下，玻璃/ SnO_2：F / n-CdS / n-CdTe / Au的器件结构表现为贝斯t太阳能电池的性能，开路电压为630 mV，短路电流密度为23.5 mAcm〜（-2），填充系数为0.44，转换效率为6.5％，其后是具有ZnO：Al的器件结构转换效率为6.0％。介绍并讨论了建议的设备能带图以及观察到的性能趋势的可能原因。

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  • 来源
    《Journal of materials science》 |2017年第24期|18865-18872|共8页
  • 作者

    O. K. Echendu; F. B. Dejene; I. M. Dharmadasa;

  • 作者单位

    Department of Physics, University of the Free State, Qwaqwa Campus, Private bag X13, Phuthaditjhaba 9866, South Africa,Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, UK;

    Department of Physics, University of the Free State, Qwaqwa Campus, Private bag X13, Phuthaditjhaba 9866, South Africa;

    Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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