Electrochemical Oxidation of Trichloroethylene Using Boron-Doped Diamond Film Electrodes

KIMBERLY   E.   CARTER; JAMES   FARRELL

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Electrochemical Oxidation of Trichloroethylene Using Boron-Doped Diamond Film Electrodes

机译：掺硼金刚石薄膜电极对三氯乙烯的电化学氧化

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This research investigated the oxidation of trichloroethene (TCE) at boron-doped diamond film electrodes. Flow-through experiments in gastight reactors were performed to determine trichloroethene oxidation products, and rotating disk electrode (RDE) experiments were used to determine TCE oxidation kinetics. RDE experiments were performed over a range in current densities and temperatures in order to elucidate the rate-limiting mechanisms for TCE oxidation. Density functional theory (DFT) simulations were used to investigate the activation barriers for oxidation by direct electron transfer and hydroxyl radicals. Oxidation of TCE produced formate, carbon dioxide, chlorate, and chloride. DFT simulations, experimentally measured apparent activation energies, and linear sweep voltammetry scans indicated that TCE oxidation occurred via direct electron transfer at electrode potentials <2.0 V/SHE, while at higher electrode potentials TCE oxidation also occurred via hydroxyl radicals produced from water oxidation.

机译：这项研究调查了三氯乙烯（TCE）在掺硼金刚石薄膜电极上的氧化。在气密反应器中进行了流通实验以确定三氯乙烯氧化产物，并使用旋转盘电极（RDE）实验确定TCE氧化动力学。为了阐明TCE氧化的限速机制，在电流密度和温度范围内进行了RDE实验。密度泛函理论（DFT）模拟用于研究直接电子转移和羟基自由基对氧化的激活障碍。 TCE氧化产生甲酸，二氧化碳，氯酸盐和氯化物。 DFT模拟，实验测量的表观活化能和线性扫描伏安扫描表明，TCE氧化是通过直接电子转移在电极电势<2.0 V / SHE下发生的，而在较高电极电势下，TCE氧化也通过水氧化产生的羟基发生。

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来源
《Environmental Science & Technology》 |2009年第21期|8350-8354|共5页
作者
KIMBERLY E. CARTER; JAMES FARRELL;
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作者单位

Department of Chemical and Environmental Engineering, The University of Arizona, Tucson, Arizona 85721;

Department of Chemical and Environmental Engineering, The University of Arizona, Tucson, Arizona 85721;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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正文语种 eng
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Electrochemical Oxidation of Trichloroethylene Using Boron-Doped Diamond Film Electrodes

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