EFFECT OF RTA ON ELECTRICAL CHARACTERISTICS OF Pt-DOPED P-N JUNCTION DIODE

Sawatsakorn Chaiyasoonthorn; Itsara Srithanachai; Narong Sangwaranatee

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EFFECT OF RTA ON ELECTRICAL CHARACTERISTICS OF Pt-DOPED P-N JUNCTION DIODE

机译：RTA对掺Pt的P-N结二极管的电学特性的影响

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This paper investigates the effect of rapid thermal annealing (RTA) between 850 and 900°C. Platinum (Pt) atom will drive-into silicon structure by using RTA process and the influence of temperature.Therefore, we study the effects of temperature in RTA process to I-V characteristics of device are 850 and 900°C at 15 mins. After annealing process, the built-in voltage (V_(bi)) is around 0.3-0.4eV, which means that Pt does not affect the device junction. The I-V characteristics after annealing show that at 900°C there is the worst leakage of current with slightly better than the forward current. In case of leakage current, it may occur from the Pt atom damage creation or trapping center in silicon structure.

机译：本文研究了850至900°C之间的快速热退火（RTA）的影响。铂（Pt）原子将通过RTA工艺进入硅结构并受温度的影响。因此，我们研究了15分钟时RTA工艺中温度对器件I-V特性的影响，温度为850和900°C。经过退火处理后，内置电压（V_（bi））约为0.3-0.4eV，这意味着Pt不会影响器件结。退火后的I-V特性表明，在900°C时，存在最差的电流泄漏，略好于正向电流。如果发生漏电流，则可能是由于硅结构中Pt原子损坏的产生或俘获中心引起的。

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来源
《Far East Journal of Electronics and Communications》 |2017年第1期|155-163|共9页
作者
Sawatsakorn Chaiyasoonthorn; Itsara Srithanachai; Narong Sangwaranatee;
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作者单位

Department of Electronics Technology Faculty of Science Ramkhamhaeng University Bangkok 10240, Thailand;

Department of Electronics Faculty of Engineering King Mongkut's Institute of Technology Ladkrabang Bangkok 10520, Thailand;

Applied Physics Research Group Faculty of Science and Technology Suan Sunandha Rajabhat University Bangkok 10300, Thailand;

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正文语种 eng
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rapid thermal annealing (RTA); platinum (Pt); I-V characteristics.;

机译：快速热退火（RTA）;铂（Pt）;I-V特性。;

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8. Electrical Characterization of 4H-Silicon Carbide P-N Junction Diodes [R] . Dunn, M. E. 1995

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EFFECT OF RTA ON ELECTRICAL CHARACTERISTICS OF Pt-DOPED P-N JUNCTION DIODE

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