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From nuclear physics to semiconductor manufacturing: the making of ion implantation

机译：从核物理到半导体制造：离子注入的制造

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This article examines the emergence of ion implantation as a major semiconductor manufacturing process from the early 1960s through the late 1970s. Ion implantation techniques originated in nuclear physics research and were first employed to make solar cells for military satellites at the Ion Physics Corporation (IPC). This work at IPC inspired a research group at Sprague Electric to use ion implantation techniques to make transistors. Sprague's process development work, and its key finding that ion implantation enabled the control of critical transistor characteristics, were both exploited by Mostek, a semiconductor start-up funded by Sprague. Mostek's engineers incorporated ion implantation into their manufacturing process to produce a string of integrated circuits that other firms could not make. Mostek's market success encouraged semiconductor firms to embrace ion implantation in the early and mid 1970s. By the end of the decade, ion implantation was used in the manufacture of virtually all advanced integrated circuits. This article improves our understanding of the development and adoption of semiconductor, and more generally high technology, manufacturing processes. It also advances our knowledge of the ways in which new technologies developed in the Cold War context made their way into the manufacturing economy.
机译：本文考察了从1960年代初到1970年代末期离子注入作为主要半导体制造工艺的出现。离子注入技术起源于核物理研究，并在离子物理公司（IPC）首次用于制造军事卫星的太阳能电池。 IPC的这项工作启发了Sprague Electric的一个研究小组使用离子注入技术制造晶体管。 Sprague的工艺开发工作以及离子注入能够控制关键晶体管特性的关键发现，均由Sprague资助的半导体初创公司Mostek开发。 Mostek的工程师在其制造过程中采用了离子注入技术，以生产其他公司无法制造的一系列集成电路。 Mostek在市场上的成功促使半导体公司在1970年代初和中期开始采用离子注入技术。到本世纪末，离子注入已用于制造几乎所有先进的集成电路。本文提高了我们对半导体以及更普遍的高科技制造工艺的开发和采用的理解。它还使我们了解在冷战时期开发的新技术进入制造业经济的方式。

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