Analytic model for field-plate-edge breakdown of planar devices terminated with field plate and semiresistivel layer

S.-K. Chung

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Analytic model for field-plate-edge breakdown of planar devices terminated with field plate and semiresistivel layer

机译：场板和半电阻层终止的平面器件场板边缘击穿的解析模型

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An analytic model for calculating the surface field of high-voltage devices terminated with a field plate and SIPOS layer is presented. This allows determination of the breakdown voltage at the field-plate edge in terms of the field-plate length, the effective length of the SIPOS layer, the thickness of oxide buffer layer, and the silicon doping concentration. The results show a fair agreement with the numerical simulations as well as the experimental results reported.

机译：提出了计算场板和SIPOS层终止的高压设备表面场的解析模型。这允许根据场板长度，SIPOS层的有效长度，氧化物缓冲层的厚度和硅掺杂浓度来确定场板边缘处的击穿电压。结果表明与数值模拟和实验结果相当吻合。

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《IEE Proceedings. Part A, Science, Measurement and Technology》 |2004年第1期|p.21-24|共4页
作者
S.-K. Chung;
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正文语种 eng
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Analytic model for field-plate-edge breakdown of planar devices terminated with field plate and semiresistivel layer

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