Mid-infrared InSb and InAlSb diode lasers

T.Ashley; J. Beswick; C.T. Elliott

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Mid-infrared InSb and InAlSb diode lasers

机译：中红外InSb和InAlSb二极管激光器

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Diode lasers with an In_0.948Al_0.052Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9μm at 77K, with the threshold current density being 140 Acm~-2 and maximum operating temperature 165K. The latter had a stimulated emission wavelength of 3.6μm at 77K, with the threshold current density being 417Acm~-2 and maximum operating temperature 160K.

机译：具有In_0.948Al_0.052Sb增益区域的二极管激光器已经通过分子束外延生长到名义上匹配的InGaSb衬底上以及不匹配的InSb衬底上。前者在77K时的激发发射波长为3.9μm，阈值电流密度为140 Acm〜-2，最高工作温度为165K。后者在77K时的激发发射波长为3.6μm，阈值电流密度为417Acm〜-2，最高工作温度为160K。

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《IEE Proceedings. Part J》 |1998年第5期|p.265-267|共3页
作者
T.Ashley; J. Beswick; C.T. Elliott;
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正文语种 eng
中图分类光电子技术、激光技术;电工技术;
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1. Mid-infrared InSb and InAlSb diode lasers [J] . Ashley T., Beswick J. IEE Proceedings. Part J . 1998,第5期

机译：中红外InSb和InAlSb二极管激光器
2. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers [J] . Q. Lu, Q. Zhuang, J. Hayton, Applied Physics Letters . 2014,第3期

机译：中红外InSb量子点二极管激光器的增益和调谐特性
3. Type-I InSb-based mid-infrared diode lasers [J] . Ashley T. Philosophical transactions of the Royal Society. Mathematical, physical, and engineering sciences . 2001,第1780期

机译：基于I型InSb的中红外二极管激光器
4. Improved Performance from InAlSb/InSb Superlattice Mid-infrared Diode Lasers [C] . T Ashley, A R Adams, P Blood, Society of Photo-Optical Instrumentation Engineers Conference on Physics and Simulation of Optoelectronic Devices . 2002

机译：从inalsb / Insb超晶格中红外二极管激光器的性能提高
5. Mid-infrared GaSb-based Type-I Quantum Wells Diode Lasers Utilizing Cascade Pumping Scheme [D] . Liang, Rui. 2014

机译：利用级联泵浦方案的基于GaSb的中红外I型量子阱二极管激光器
6. Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals [O] . Weiwei Ma, Xiaobo Qian, Jingya Wang, -1

机译：二极管泵浦Er：SrF2单晶中的高效双波长中红外连续波激光器
7. GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers [O] . Yin, M, Nash, G R, Coomber, S D, 2008

机译：GaInSb / AlInSb多量子阱用于中红外激光
8. Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications [R] . Biefeld, Phillips, J. D. 1999

机译：使用Inalsb缓冲器在Gaas衬底上生长Insb用于磁场传感器应用

Mid-infrared InSb and InAlSb diode lasers

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