Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

T.V. Lvova; I .A. Andreev; E.V Kunitsvna

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Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

机译：GaSb相关化合物在硫化物处理的（100）GaSb衬底上的液相外延生长

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The authors have performed theoretical and experimental investigations of the chemical interaction between mono- and disulphide water sodium solutions and (100) surfaces of GaSb. It is shown that the pre-epitaxial sulphide treatment of the GaSb substrate improves morphology and interface abruptness of the GaSb/GaInAsSb heterostructures grown by liquid phase epitaxy (LPE).

机译：作者对单硫化物和二硫化物水钠溶液与（100）GaSb表面之间的化学相互作用进行了理论和实验研究。结果表明，GaSb衬底的外延硫化物处理改善了液相外延（LPE）生长的GaSb / GaInAsSb异质结构的形貌和界面突变性。

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《IEE Proceedings. Part J》 |1998年第5期|p.303-306|共4页
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T.V. Lvova; I .A. Andreev; E.V Kunitsvna;
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中图分类光电子技术、激光技术;电工技术;
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1. Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates [J] . Lvova T.V., Andreev I.A. IEE Proceedings. Part J . 1998,第5期

机译：GaSb相关化合物在硫化物处理的（100）GaSb衬底上的液相外延生长
2. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-Ⅱsuperlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors [J] . Y. Huang, J.-H. Ryou, R.D. Dupuis, Journal of Crystal Growth . 2011,第1期

机译：用于长波长红外光电探测器的金属有机化学气相沉积在GaSb衬底上InAs / GaSb和InAs / InAsSb II型超晶格的外延生长和表征
3. InAs_(0.3)Sb_(0.7) films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy [J] . Fubao Gao, NuoFu Chen, Lei Liu, Journal of Crystal Growth . 2007,第2期

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4. Growth of GaSb dots nucleation layer and thin-film GaSb on Si(100) substrate by molecular beam epitaxy [C] . Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

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5. An atomistic simulation of the epitaxial growth of silicon(100). [D] . Goel, Sweta. 2001

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7. Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes [O] . WU MC 2012

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Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates

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