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首页> 外文期刊>IEE Proceedings. Part J >Interface-induced phenomena in type II antimonide--arsenide heterostructures
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Interface-induced phenomena in type II antimonide--arsenide heterostructures

机译：II型锑-砷异质结构中的界面诱导现象

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Type II antimonide arsenide based heterostructures have recently received great attention from researchers engaged in the design of mid-infrared optoelectronic devices. Magnetotransport properties of the semimetal channel and the interface electroluminescence were experimentally studied on type II broken- gap GaInAsSb/InAs single heterojunctions grown by LPE with high quality interface. An electron channel with high Hall mobility was, for the first time, observed at the interface of isotype p- GaInAsSb/p-InAs heterojunctions with undoped and slightly doped quaternary layers at low temperatures. A depletion of the electron channel was found to be due to the heavy acceptor doping level of the quaternary layer. The two- dimensional nature of the interface carriers was established by Shubnikov-de Haas oscillation experiments at 1.8-4.2K under magnetic fields up to 9-14T. Intensive interface electroluminescence in the structures under study was observed in the spectral range of 3-4μm at low temperatures (4.2-77K). A model of the recombination transition at the type II broken-gap interface was proposed and experimentally confirmed. A new physical approach to the design of mid-infrared tunnelling-injection lasers is demonstrated.
机译：II型基于砷化锑的异质结构最近受到从事中红外光电器件设计的研究人员的极大关注。在具有高界面质量的LPE上生长的II型断隙GaInAsSb / InAs单异质结上，通过实验研究了半金属通道的磁传输特性和界面电致发光。首次在低温下在同型p-GaInAsSb / p-InAs异质结与未掺杂和轻度掺杂的四元层的界面上观察到具有高霍尔迁移率的电子通道。发现电子通道的耗尽归因于四元层的重受体掺杂水平。界面载体的二维性质是通过Shubnikov-de Haas在高达9-14T的磁场下于1.8-4.2K的振荡实验确定的。在低温（4.2-77K）的3-4μm光谱范围内，观察到的结构中的强界面电致发光。提出并在实验上证实了在II型断裂间隙界面处的重组转变的模型。演示了一种新的物理方法来设计中红外隧穿注入激光器。

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