...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78-In0.83Ga0.17As0.82Sb0.18 single heterojunction
【24h】

Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78-In0.83Ga0.17As0.82Sb0.18 single heterojunction

机译：IIP-Ga0.84In0.16As0.22Sb0.78 / n-In0.83Ga0.17As0.82Sb0.18类型的界面诱导电致发光

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary. [References: 23]
机译：从II型P-Ga0.84In0.16As0.22Sb0.78 / n-In0.83Ga0.17As0.82Sb0.18的单异质结通过液相外延生长从77-300 K范围内观察到强电致发光。富含熔体。形成P-n异质结的四元外延层被无意掺杂，并晶格匹配生长在（100）取向的n型InAs衬底上。对异质结构的电致发光和光致发光发射光谱进行了详细研究，并在下面进行了讨论。发光光谱包含两个界面诱导的发射带：hnu（A），通过跨P-Ga0.84In0.16As0.22Sb0.78 / n-In0.83Ga0的电子和空穴量子阱子带之间的辐射跃迁确定。 17As0.82Sb0.18异质界面，而发射带hnu（B）起源于II型异质边界附近窄间隙In0.83Ga0.17As0.82Sb0.18中涉及受体态的辐射跃迁。 [参考：23]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号