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首页> 外文期刊>IEEE Journal of Quantum Electronics >Theoretical study of a potential low-noise semimetal-based avalanche photodetector
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Theoretical study of a potential low-noise semimetal-based avalanche photodetector

机译：一种潜在的低噪声半金属基雪崩光电探测器的理论研究

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摘要

The authors present a theoretical analysis of a possible avalanching photodetector (APD)-based on II-VI compound semiconductors. Each unit cell is composed of a HgTe layer, or a similar semimetal, sandwiched between two layers of CdTe and HgCdTe or similar semiconducting materials. The barrier layers are graded so that the leading barrier height is just high enough to eliminate the thermionic emission dark current out of the well. The use of a semimetal within the well has a distinct advantage over a semiconductor, which is that the ionization process is essentially an interband mechanism since the confined carriers within the well lie within the overlapping conduction and valence bands. As a result, the concentration of target carriers is virtually inexhaustible as in a conventional interband device.
机译：作者提出了一种基于II-VI化合物半导体的可能雪崩光电探测器（APD）的理论分析。每个单元电池由夹在CdTe和HgCdTe两层或类似半导体材料之间的HgTe层或类似的半金属组成。对势垒层进行分级，以使领先的势垒高度刚好足够高，以消除井中的热电子发射暗电流。在阱中使用半金属具有优于半导体的明显优势，这是因为电离过程本质上是一种带间机制，因为阱中的受限载流子位于重叠的导带和价带之内。结果，目标载流子的集中实际上像传统的带间设备一样是不竭的。

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