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A low-power monolithic GaAs FET bandpass filter based on negative resistance technique

机译:基于负电阻技术的低功耗单片GaAs FET带通滤波器

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摘要

This paper describes a monolithic GaAs FET active bandpass filter utilizing negative resistance elements. The negative resistance element was realized with a common-drain FET with series inductive feedback and the measured output impedance characteristics are given. The fabricated monolithic fourth-order filter showed an insertion loss of 0.7 dB at 4.85 GHz and a 3-dB bandwidth of 50 MHz with a DC power consumption of 7.5 mW.
机译:本文介绍了一种采用负电阻元件的单片GaAs FET有源带通滤波器。负电阻元件由具有串联电感反馈的共漏极FET实现,并给出了测得的输出阻抗特性。制成的单片四阶滤波器在4.85 GHz时显示出0.7 dB的插入损耗,在50 MHz时具有3-dB带宽,直流功耗为7.5 mW。

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