Total charge capacitor model for short-channel MESFETs

Webster D.; Darvishzadeh M.

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Total charge capacitor model for short-channel MESFETs

机译：短通道MESFET的总充电电容器模型

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Total charge models for short-channel metal-semiconductor field-effect transistors (MESFETs) currently available in large-signal simulator packages such as SPICE give a poor description of the bias dependence of the gate capacitance. The authors describe a novel empirical model whose structure is deduced from the reconstructed total charge function derived from measured S-parameters. The new model gives a good overall fit to the observed gate capacitance behavior of a commercial monolithic microwave/millimeter-wave integrated circuit (MMIC) MESFET over a wide range of bias conditions and enables large-signal MESFET models to have a superior fit to measured S-parameters, giving greater confidence in design.

机译：当前在诸如SPICE之类的大信号模拟器封装中提供的短沟道金属半导体场效应晶体管（MESFET）的总电荷模型无法很好地描述栅极电容的偏置依赖性。作者描述了一种新颖的经验模型，该模型的结构是从重构的总电荷函数推导而来的，该总电荷函数从测得的S参数得出。新模型对观察到的商用单片微波/毫米波集成电路（MMIC）MESFET在广泛的偏置条件下的栅极电容行为具有良好的总体拟合度，并使大信号MESFET模型对测量的器件具有优异的拟合度S参数，使设计更有信心。

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《IEEE Microwave and Guided Wave Letters》 |1996年第10期|P.351-353|共3页
作者
Webster D.; Darvishzadeh M.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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3. A New 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Si-SOI MESFETs [J] . Prashant Pandey, B. B. Pal, S. Jit IEEE Transactions on Electron Devices . 2004,第2期

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8. CS1: A Two-Dimensional Finite Element Charge-Sheet Model of a Short-Channel MOS Transistor [R] . Wilson, C. L. , Blue, J. L. 1982

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Total charge capacitor model for short-channel MESFETs

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