• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Microwave and Guided Wave Letters >An HEMT with an integrated on-drain capacitor as basis of an hybrid mixer
【24h】

An HEMT with an integrated on-drain capacitor as basis of an hybrid mixer

机译：带有集成式漏极电容器的HEMT作为混合混频器的基础

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper reports the study of an HEMT, the characteristic of which is to have a decoupling capacitor directly integrated between its drain and source electrodes. It is shown that, with an appropriate design of this basic filtering element, such a device proves to be efficient as for the realization of hybrid gate mixers. An experimental demonstration of this property is given by comparing a HEMT without capacitor with a HEMT with an integrated capacitor. For the latter, the gate length of which is 0.3 /spl mu/m, it is shown that, at 18 GHz, a 5-dB improvement of conversion gain is provided by the integrated capacitor.
机译：本文报道了对HEMT的研究，其特征是在其漏极和源极之间直接集成了一个去耦电容器。结果表明，通过对该基本滤波元件进行适当的设计，这种装置被证明对于实现混合门混频器是有效的。通过将不带电容器的HEMT与带集成电容器的HEMT进行比较，对该特性进行了实验演示。对于后者的栅极长度为0.3 / spl mu / m，显示出在18 GHz时，集成电容器可将转换增益提高5 dB。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号