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首页> 外文期刊>IEEE Photonics Technology Letters >Fully Integrated Active Quenching Circuit Driving Custom-Technology SPADs With 6.2-ns Dead Time
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Fully Integrated Active Quenching Circuit Driving Custom-Technology SPADs With 6.2-ns Dead Time

机译：完全集成的有源淬火电路以6.2ns的死区时间驱动定制技术SPAD

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摘要

The minimization of the dead time necessary for the operation of a single-photon avalanche diode (SPAD) plays a crucial role in many demanding single-photon applications. Among these, it is worth mentioning the implementation of airborne light detection and ranging systems exploited to scan the terrain topography through semiporous obscurations. In this letter, we present the development and the experimental characterization of a fully integrated active quenching circuit able to drive custom-technology SPADs with a dead time as low as 6.2 ns, corresponding to a maximum photon count rate of more than 160 Mcps. Thanks to the use of a high-voltage CMOS fabrication technology, the circuit is able to operate also SPADs that require an excess bias of few tens of Volts, like the recently developed red-enhanced SPAD up to a maximum photon count rate of 100 Mcps.
机译：在许多要求苛刻的单光子应用中，使单光子雪崩二极管（SPAD）工作所需的死区时间最小化至关重要。其中，值得一提的是机载光检测和测距系统的实施，该系统用于通过半孔遮挡物扫描地形图。在这封信中，我们介绍了一种完全集成的有源淬灭电路的开发和实验特性，该电路能够驱动死区时间低至6.2 ns的定制技术SPAD，对应的最大光子计数率超过160 Mcps。由于使用了高压CMOS制造技术，该电路还能够运行需要数十伏过大偏置的SPAD，例如最近开发的红色增强型SPAD，其最大光子计数率高达100 Mcps 。

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