Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy

Choulis S.A.; Hosea T.J.C.; Ghosh S.; Klar P.J.; Hofmann M.

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Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy

机译：使用电反射光谱法对稀氮化物VCSEL的生长后无损表征

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We report electroreflectance (ER) measurements on a dilute-N GaInNAs vertical-cavity surface-emitting laser structure, as a function of temperature T, which probe the coupling between the cavity mode (CM) and a broad quantum-well (QW) ground state exciton. The latter is not separately observable in the ER, but, by monitoring the coupled CM-QW lineshape, we show it has maximum amplitude and is anti-symmetric when the CM and QW energies coincide at a certain T/sub opt/. This predicted T/sub opt/ is confirmed by optically pumped lasing measurements on the same sample.

机译：我们报告在一个稀薄N型GaInNAs垂直腔面发射激光器结构上的电反射（ER）测量结果，它是温度T的函数，可探测腔模（CM）与宽量子阱（QW）地之间的耦合国家激子。后者在ER中不能单独观察到，但是通过监视耦合的CM-QW线形，我们显示出它具有最大幅度，并且当CM和QW能量在某个T / sub opt /一致时是反对称的。该预测的T / sub opt /通过对同一样品进行光泵浦激光测量来确认。

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来源
《IEEE Photonics Technology Letters》 |2003年第8期|p.26-28|共3页
作者
Choulis S.A.; Hosea T.J.C.; Ghosh S.; Klar P.J.; Hofmann M.;
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作者单位

Blackett Lab., Imperial Coll., London, UK;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
gallium arsenide; indium compounds; III-V semiconductors; surface emitting lasers; quantum well lasers; spectral line breadth; laser cavity resonators; laser modes; electroreflectance; semiconductor device testing; optical testing; excitons; optical;

机译：砷化镓铟化合物III-V半导体;表面发射激光器;量子阱激光器;谱线宽度激光腔谐振器;激光模式电反射半导体器件测试;光学测试;激子光学的;

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Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy

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