A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

Miyamoto T.; Takeuchi K.

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A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

机译：一种用于长波长半导体激光器的新型GaInNAs-GaAs量子阱结构

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We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 /spl mu/m or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-/spl mu/m emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.

机译：我们为GaInNAs-GaAs激光器提出了一种新颖的量子阱（QW）结构，该结构可以发射1.3 / spl mu / m或更长波长的光。这个想法是在阱和势垒之间插入晶格匹配的GaInNAs中间层，这对于延长发射波长和减小阱厚度是有效的。结果表明，通过使用所提出的GaInNAs-GaAs QW，其厚度比传统的矩形GaInNAs QW薄，可以实现1.3- / spl mu / m的发射。这种结构将放松应变GaInNAs层的设计限制。

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《IEEE Photonics Technology Letters》 |1997年第11期|P.1448-1450|共3页
作者
Miyamoto T.; Takeuchi K.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
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2. Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers [J] . Thiis P.J.A., Tiemeijer L.F. IEEE Journal of Quantum Electronics . 1994,第2期

机译：长波长应变层InGaAs（P）量子阱半导体激光器和放大器的研究进展
3. Room Temperature Performance of Low Threshold 1.34-1.44-(mu)m GaInNAs-GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy [J] . A. Hierro, J. M. Ulloa, E. Calleja, IEEE Photonics Technology Letters . 2005,第6期

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5. Indium gallium arsenic nitride antimonide: A novel material for long-wavelength semiconductor lasers. [D] . Yang, Xiaoping. 2002

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A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

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