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首页> 外文期刊>IEEE Photonics Technology Letters >AlGaAs vertical-cavity surface-emitting laser responses to 4.5-MeV proton irradiation
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AlGaAs vertical-cavity surface-emitting laser responses to 4.5-MeV proton irradiation

机译：AlGaAs垂直腔面发射激光器对4.5 MeV质子辐照的响应

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摘要

We have irradiated single- and multimode AlGaAs vertical-cavity surface-emitting laser (VCSEL) arrays operating at a nominal wavelength of 780 nm with 4.5-MeV protons and doses ranging from 10 to 30 Mrad in the active region. We observed a peak power reduction of about 2% per Mrad in the 14-/spl mu/m aperture, multimode VCSELs. Single-mode VCSELs having an aperture of 6 /spl mu/m exhibited a smaller peak power reduction of 0.4%-1% per Mrad. A slight shift in the current threshold was observed only for the multimode VCSELs at dose levels above 10 Mrad. First results indicate a reduced VCSEL peak laser power output that is dominated by a temperature shift caused by the radiation induced increase in resistive heating. In contrast, the power reduction in edge-emitting lasers is dominated by the enhanced radiation induced nonradiative recombination rate. The VCSEL irradiation was performed with a focused ion micro beam that was rastered over the device surface, ensuring a very uniform exposure of a single device in the array.
机译：我们已经辐照了单模和多模AlGaAs垂直腔面发射激光器（VCSEL）阵列，其工作在标称波长为780 nm的情况下，在活性区域中具有4.5 MeV质子，剂量范围为10到30 Mrad。我们观察到在14- / splμ/ m孔径的多模VCSEL中，每Mrad的峰值功率降低约2％。孔径为6 / splμu/ m的单模VCSEL的峰值功率降低幅度较小，为每Mrad 0.4％-1％。仅在剂量水平高于10 Mrad的多模VCSEL中，观察到电流阈值略有变化。最初的结果表明，VCSEL峰值激光功率输出降低，这主要是由辐射引起的电阻加热增加引起的温度偏移所致。相反，边缘发射激光器的功率降低主要由增强的辐射诱导的非辐射复合率决定。 VCSEL辐照是用聚焦离子微束进行的，该束离子束光栅化在器件表面，以确保阵列中单个器件的非常均匀的曝光。

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