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首页> 外文期刊>Biomedical Circuits and Systems, IEEE Transactions on >Integrated High-Voltage Inductive Power and Data-Recovery Front End Dedicated to Implantable Devices
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Integrated High-Voltage Inductive Power and Data-Recovery Front End Dedicated to Implantable Devices

机译：专用于可植入设备的集成式高压感应功率和数据恢复前端

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In near-field electromagnetic links, the inductive voltage is usually much larger than the compliance of low-voltage integrated-circuit (IC) technologies used for the implementation of implantable devices. Thus most integrated power-recovery approaches limit the induced signal to low voltages with inefficient shunt regulation or voltage clipping. In this paper, we propose using high-voltage (HV) complementary metal–oxide semiconductor technology to fully integrate the inductive power and data-recovery front end while adopting a step-down approach where the inductive voltage is left free up to 20 or 50 V. The advantage is that excessive inductive power will translate to an additional charge that can be stored in a capacitor, instead of shunting to ground excessive current with voltage limiters. We report the design of two consecutive HV custom ICs—IC1 and IC2—fabricated in DALSA semiconductor C08G and C08E technologies, respectively, with a total silicon area (including pads) of 4 and 9 mm$^{2}$, respectively. Both ICs include HV rectification and regulation; however, IC2 includes two enhanced rectifier designs, a voltage-doubler, and a bridge rectifier, as well as data recovery. Postlayout simulations show that both IC2 rectifiers achieve more than 90% power efficiency at a 1-mA load and provide enough room for 12-V regulation at a 3-mA load and a maximum-available inductive power of 50 mW only. Successful measurement results show that HV regulators provide a stable 3.3- to 12-V supply from an unregulated input up to 50 or 20 V for IC1 and IC2, respectively, with performance that matches simulation results.
机译：在近场电磁链路中，感应电压通常比用于实现可植入设备的低压集成电路（IC）技术的兼容性大得多。因此，大多数集成式功率恢复方法将分流调节或电压削波效率低下，将感应信号限制为低电压。在本文中，我们建议使用高压（HV）互补金属氧化物半导体技术来完全集成感应功率和数据恢复前端，同时采用降压方法，其中感应电压最多可释放20或50 V.的优点是，过量的感应功率将转化为可以存储在电容器中的额外电荷，而不是通过限压器将多余的电流分流到地。我们报告了两个连续的HV定制IC（IC1和IC2）的设计，分别用DALSA半导体C08G和C08E技术制造，总硅面积（包括焊盘）分别为4毫米和9毫米。这两个IC均包含高压整流和调节功能；但是，IC2包括两个增强的整流器设计，倍压器和桥式整流器以及数据恢复。布局后的仿真表明，两个IC2整流器在1mA负载下均达到90％以上的电源效率，并在3mA负载下提供了足够的12V稳压空间，最大可用感应功率仅为50mW。成功的测量结果表明，HV稳压器可通过不受调节的输入为IC1和IC2分别提供高达50或20 V的稳定3.3至12 V电源，性能与仿真结果相匹配。

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