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首页> 外文期刊>Circuits and Systems I: Regular Papers, IEEE Transactions on >Investigation of Inverse Class-E Power Amplifier at Sub-Nominal Condition for Any Duty Ratio
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Investigation of Inverse Class-E Power Amplifier at Sub-Nominal Condition for Any Duty Ratio

机译：亚额定条件下任何占空比的E类反向功率放大器的研究

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摘要

The performance of the inverse class-E power amplifier at sub-nominal condition for any duty ratio is investigated in this paper. Comparing with the inverse class-E power amplifier at nominal condition, which demands both zero-current-switching (ZCS) and zero-current-derivative-switching (ZCDS) conditions simultaneously, the presented inverse class-E power amplifier at sub-nominal condition is only restricted by the ZCS condition. The proposed power amplifier increases two design parameters because the ZCDS condition limitation is cancelled and the duty ratio can be arbitrarily set. The analytical results demonstrate that the theoretical drain efficiency is still 100% and that all the circuit elements can be adjusted by the two released parameters. Furthermore, the influences of the transistor's parasitic switch-on resistor and output capacitor are investigated and a simulation example is given to verify the proposed design methodology's accuracy. Although it is not sufficiently tolerant of the elements mismatches and the transistor's parasitic capacitor in practical design, the inverse class-E power amplifier at sub-nominal condition is still one of the promising candidates for high-efficiency power amplifier design if the two drawbacks are appropriately averted.
机译：本文研究了亚标称条件下E类逆功率放大器在任何占空比下的性能。与标称条件下同时要求零电流开关（ZCS）和零电流微分开关（ZCDS）条件的E类逆功率放大器相比，本发明的E类逆功率放大器在标称条件下条件仅受ZCS条件限制。拟议的功率放大器增加了两个设计参数，因为取消了ZCDS条件限制，并且可以任意设置占空比。分析结果表明，理论上的漏极效率仍然是100％，并且所有电路元件都可以通过两个释放的参数进行调整。此外，研究了晶体管的寄生导通电阻和输出电容器的影响，并给出了仿真示例，以验证所提出的设计方法的准确性。尽管在实际设计中不能充分容忍元件失配和晶体管的寄生电容器，但如果有两个缺点，则亚标称条件下的逆E类功率放大器仍然是高效功率放大器设计的有希望的候选者之一。适当地避免了。

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