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首页> 外文期刊>Circuits and Systems I: Regular Papers, IEEE Transactions on >Energy Efficient Low-Noise Multichannel Neural Amplifier in Submicron CMOS Process
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Energy Efficient Low-Noise Multichannel Neural Amplifier in Submicron CMOS Process

机译：亚微米CMOS工艺中的高能效低噪声多通道神经放大器

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This paper presents a low noise low power neural recording amplifier that occupies a very small silicon area and is suitable to integrate with multielectrode arrays in cortical implants. We analyze main problems in neural recording systems processed in modern submicron technologies, i.e., leakage currents, ability to obtain very large and precisely controlled MOS based resistances and spread of the main system parameters from channel to channel. We also introduce methods allowing to mitigate them. Finally, we present methods allowing to calculate optimal channel dimensions of the recording channel's input transistors in order to obtain the lowest Input Referred Noise (IRN) for given power and area requirements. The proposed methodology has been applied in the 8-channel integrated recording ASIC dedicated to the broad range of neurobiology experiments. Each of the recording channels is equipped with the control register that enables to set main channel parameters independently. Thanks to this functionality, the user is capable of setting lower cut-off frequency within the range of 300 mHz–900 Hz. The upper cut-off frequency can be switched either to 30 Hz–290 Hz or 9 kHz, while the voltage gain can be set either to 260 V/V or 1000 V/V. A single recording channel is supplied with 1.8 V and consumes only 11 $mu$ W of power, while its input referred noise is equal to 4.4 $mu$V resulting in NEF equal to 4.1.
机译：<？Pub Dtl？>本文提出了一种低噪声，低功耗的神经记录放大器，该放大器占硅面积很小，适合与皮质植入物中的多电极阵列集成。我们分析了现代亚微米技术处理的神经记录系统中的主要问题，即泄漏电流，获得非常大且精确控制的基于MOS的电阻的能力以及主要系统参数在通道之间的传播。我们还将介绍允许缓解这些问题的方法。最后，我们提出了一些方法，这些方法可以计算记录通道输入晶体管的最佳通道尺寸，以便在给定的功率和面积要求下获得最低的输入参考噪声（IRN）。所提出的方法已应用于专用于广泛的神经生物学实验的8通道集成记录ASIC。每个记录通道都配备有控制寄存器，可独立设置主通道参数。借助此功能，用户可以在300 mHz–900 Hz的范围内设置较低的截止频率。上限频率可以切换为30 Hz–290 Hz或9 kHz，而电压增益可以设置为260 V / V或1000 V / V。单个记录通道的电压为1.8 V，仅消耗11的 $ mu $ W，等于4.4 $ mu $ V，导致NEF等于4.1。

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