Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories

Ho Y.; Huang G. M.; Li P.

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Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories

机译：非易失性忆阻器存储器的动力学特性和设计分析

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Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found “the missing fourth circuit element,” memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance issues.

机译：新型非易失性通用存储技术对于提供纳米计算所需的存储至关重要。作为下一代存储器的潜在竞争者，最近发现的“缺少的第四电路元件”忆阻器引起了许多研究兴趣。在本文中，从基本的忆阻器器件方程开始，我们为基于忆阻器的存储器开发了一套完整的属性和设计方程。我们的分析专门针对与存储器操作相关的关键电忆阻器件特性。利用我们的派生特性，我们研究了读写电路的设计并分析了重要的数据完整性和噪声容限问题。

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《Circuits and Systems I: Regular Papers, IEEE Transactions on》 |2011年第4期|p.724-736|共13页
作者
Ho Y.; Huang G. M.; Li P.;
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作者单位

Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA;

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正文语种 eng
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关键词
Charge-controlled memristance; flux-controlled memristance; zero-net charge injection; zero-net flux injection;

机译：电荷控制忆阻;助焊剂忆阻;零净电荷注入;零净磁通注入;

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1. Design and Performance Analysis of Nano-Scale Memristor-Based Nonvolatile Static Random Access Memory [J] . Anuradha, Singh Jeetendra, Raj Balwinder, Sensor Letters: A Journal Dedicated to all Aspects of Sensors in Science, Engineering, and Medicine . 2018,第10期

机译：基于纳米级忆阻的非易失性静态随机存取存储器的设计与性能分析
2. Memristor-Based Low-Power High-Speed Nonvolatile Hybrid Memory Array Design [J] . Asif Faruque Khandoker, Biswas Baishakhi Rani, Rashid A. B. M. Harun-ur Circuits, systems, and signal processing . 2017,第9期

机译：基于忆阻器的低功耗高速非易失性混合存储阵列设计
3. Design and Analysis of Low Power Hybrid Memristor-CMOS Based Distinct Binary Logic Nonvolatile SRAM Cell [J] . Veerappan Saminathan, Kuppusamy Paramasivam Circuits and Systems . 2016,第3期

机译：基于低功耗混合忆阻器CMOS的二元逻辑非易失性SRAM单元的设计与分析
4. Memristor System Properties and Its Design Applications to Circuits Such as Nonvolatile Memristor Memories [C] . Garng M. Huang, Yenpo Ho, Peng Li 2010 International Conference on Communications, Circuits and Systems . 2010

机译：忆阻器系统特性及其在电路（例如非易失性忆阻器存储器）中的设计应用
5. Nanoscale nonvolatile memory circuit design using emerging spin transfer torque magnetic random access memory [D] . Vemula, Lohith Kumar. 2016

机译：纳米级非易失性存储器电路设计使用新出现的自旋转移扭矩磁随机存取存储器
6. Design of Single‐Molecule Multiferroics for Efficient Ultrahigh‐Density Nonvolatile Memories [O] . Qing Yang, Tingting Zhong, Zhengyuan Tu, 2019

机译：高效超高密度非易失性存储器的单分子多铁化合物设计
7. Nonvolatile Memory Cell Based on Memristor [O] . Santosh Parajuli, Ram Kaji Budhathoki, Hyongsuk Kim 2020

机译：基于Memristor的非易失性存储器单元

Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories

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