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首页> 外文期刊>IEEE Transactions on Circuits and Systems. I, Regular Papers >New RTD-boostrapped current and voltage references. I.Self-bootstrapped references
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New RTD-boostrapped current and voltage references. I.Self-bootstrapped references

机译:新的RTD增强型电流和电压基准。一,自举参考

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摘要

New current and voltage references are proposed which utilize depletion-mode field effect transistors and resonant tunneling diodes (RTDs) in a self-bootstrapped configuration to take advantage of the ultra-low local transconductance of RTDs and the high output-impedance of cascoded amplifier stages. These references promise improved supply rejection compared with that of the best existing GaAs MESFET voltage references
机译:提出了新的电流和电压基准,它们在自举配置中利用了耗尽型场效应晶体管和谐振隧穿二极管(RTD),以利用RTD的超低局部跨导和级联放大器级的高输出阻抗。与现有最好的GaAs MESFET电压基准相比,这些基准有望改善电源抑制性能

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