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Duromer MID technology for system-in-package generation

机译：用于系统级封装的Duromer MID技术

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The Duromer molded interconnect device (MID) technology for realization of a stackable system-in-package (SiP) is similar to conventional MID technology, which is usually realized using thermoplastic polymers, combining the functionality of housing and substrate into one device. Advantages of the conventional MID technology are the reduction of parts during assembly by integrating mechanical and electrical functionality into a device and the reduction of space, as MID allows a three-dimensional (3-D) integration of devices. A disadvantage of conventional technology, especially if combined with typical technical thermoplastics, is the large mismatch in coefficient of thermal expansion (CTE) between substrate and advanced microelectronic components as chip scale package (CSP) or flip-chip. This is reducing the applicability of thermoplastic MID to moderate temperature ranges and/or to rather robust components. To overcome this disadvantage, the use of low CTE duromer as epoxy molding compounds (EMCs) as base material for device assembly is proposed, generating a unique technology well adapted to SiP and microelectromechanical system (MEMS) packaging needs, the Duromer MID approach. The technological realization of Duromer MID uses conventional backend processes as IC bonding to flex, transfer molding using epoxy molding compounds, laser machining, metallization, and structurization processes well known from PCB processing. The use of existing equipment allows both a rather fast process implementation and a cost-effective manufacturing of the components. Within this paper, the investigations described previously are driven further toward a description of a generic packaging technology integrating detailed analysis of metallization processes and assembly issues. Summarized, this paper presents further process development and feasibility analysis of wafer-level packaging technologies for SiP solutions based on a Duromer MID approach.
机译：用于实现可堆叠的系统级封装（SiP）的Duromer模制互连设备（MID）技术类似于常规MID技术，该技术通常使用热塑性聚合物实现，将外壳和基板的功能组合到一个设备中。传统的MID技术的优点是通过将机械和电气功能集成到设备中来减少组装期间的零件，并减少了空间，因为MID允许对设备进行三维（3-D）集成。常规技术的缺点，特别是与典型的热塑性塑料结合使用时，其缺点是基板与先进的微电子元件（如芯片级封装（CSP）或倒装芯片）之间的热膨胀系数（CTE）不匹配。这降低了热塑性MID在中等温度范围和/或相当坚固的部件上的适用性。为克服此缺点，提出了将低CTE duromer用作环氧模塑料（EMC）作为设备组装的基础材料的建议，从而产生了一种非常适合SiP和微机电系统（MEMS）封装需求的独特技术，即Duromer MID方法。 Duromer MID的技术实现采用传统的后端工艺，例如将IC粘合到柔性板上，使用环氧树脂模塑料进行传递成型，激光加工，金属化和PCB加工众所周知的结构化工艺。使用现有设备既可以实现较快的过程实施，又可以经济高效地制造组件。在本文中，先前描述的研究将进一步推动对通用包装技术的描述，该技术集成了对金属化过程和组装问题的详细分析。综上所述，本文介绍了基于Duromer MID方法的SiP解决方案的晶圆级封装技术的进一步工艺开发和可行性分析。

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