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Laser direct exposure of photodefinable polymer masks using shaped-beam optics

机译:使用定形光束光学器件对可光界定的聚合物掩模进行激光直接曝光

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In this paper, we explore laser direct-write photolithography and ablation processes to finely pattern polymer resists, enabling the creation of densely patterned circuit substrates. The exposure dynamics are first modeled followed by presentation of data. For the exposure experiments, a tripled-YAG ultraviolet (UV) laser drilling system with highly attenuated output was used to directly expose a photodefinable resist followed by chemical developing. To improve the exposure process, special beam-shaping optics were utilized which convert the normal Gaussian beam output to a "top hat" flat exposure, ideal for even exposure of the photoresist across the beam aperture. To further improve the exposure process, a square-shaped aperture was used to compensate for the spatial average fluence variation across the scanned imaged line. For the ablation experiments, the square-shaped beam was used at higher fluence to directly ablate the resist without subsequent developing. Laser direct patterning is presented as an alternative to mask-imaging photolithography to produce fine-line traces (50 /spl mu/m or smaller) for flex circuits, circuit boards, and other interconnect substrates.
机译:在本文中,我们探索了激光直写光刻和烧蚀工艺,以对聚合物抗蚀剂进行精细图案化,从而能够形成密集图案化的电路基板。首先对曝光动力学建模,然后进行数据表示。对于曝光实验,使用具有高衰减输出的三重YAG紫外(UV)激光钻孔系统直接曝光可光界定的抗蚀剂,然后进行化学显影。为了改善曝光过程,使用了特殊的光束整形光学器件,将正常的高斯光束输出转换为“礼帽式”平面曝光,非常适合使光刻胶在光束孔径上均匀曝光。为了进一步改善曝光过程,使用了一个正方形的光圈来补偿整个扫描成像线的空间平均注量变化。对于烧蚀实验,使用方形光束以更高的能量密度直接烧蚀抗蚀剂,而无需后续显影。提出了激光直接图案化作为掩模成像光刻法的替代方法,以产生用于柔性电路,电路板和其他互连基板的细线迹线(50 / splμm/ m或更小)。

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