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Partial characterization of the positive capacity region of two-dimensional asymmetric run length constrained channels

机译:二维非对称游程约束通道的正电容区域的部分表征

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摘要

A binary sequence satisfies a one-dimensional (d,k) run length constraint if every run of zeros has length at least d and at most k. A two-dimensional binary pattern is (d/sub 1/,k/sub 1/,d/sub 2/,k/sub 2/)-constrained if it satisfies the one-dimensional (d/sub 1/,k/sub 1/) run length constraint horizontally and the one-dimensional (d/sub 2/,k/sub 2/) run length constraint vertically. For given d/sub 1/, k/sub 1/, d/sub 2/, and k/sub 2/, the asymmetric two-dimensional capacity is defined as C/sub d1,k1,d2,k2/=lim/sub m,n/spl rarr//spl infin// (1/(mn)) log/sub 2/ N/sub m,n//sup (d1,k1,d2,k2)/ where N/sub m,n//sup (d1,k1,d2,k2)/ denotes the number of (d/sub 1/,k/sub 1/,d/sub 2/,k/sub 2/)-constrained m/spl times binary patterns. We determine whether the capacity is positive or is zero, for many choices of (d/sub 1/,k/sub 1/,d/sub 2/,k/sub 2/).
机译:如果每个零位游程的长度至少为d且最大为k,则二进制序列满足一维(d,k)游程长度约束。如果二维二进制模式满足一维(d / sub 1 /,k / sub 2 /,k / sub 2 /,k / sub 2 /),则约束该二维二进制模式。 sub 1 /)游程长度约束水平,一维(d / sub 2 /,k / sub 2 /)游程长度约束垂直。对于给定的d / sub 1 /,k / sub 1 /,d / sub 2 /和k / sub 2 /,不对称二维电容定义为C / sub d1,k1,d2,k2 / = lim / sub m,n / spl rarr // spl infin //(1 /(mn))log / sub 2 / N / sub m,n // sup(d1,k1,d2,k2)/其中N / sub m, n // sup(d1,k1,d2,k2)/表示受(d / sub 1 /,k / sub 1 /,d / sub 2 /,k / sub 2 /)约束的m / spl次/ n个二进制模式。对于(d / sub 1 /,k / sub 1 /,d / sub 2 /,k / sub 2 /)的许多选择,我们确定容量为正还是为零。

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