...
首页> 外文期刊>IEEE Transactions on Information Theory >The reliability of semiconductor RAM memories with on-chip error-correction coding
【24h】

The reliability of semiconductor RAM memories with on-chip error-correction coding

机译:带有片上纠错编码的半导体RAM存储器的可靠性

获取原文
获取原文并翻译 | 示例
           

摘要

The mean lifetimes are studied of semiconductor memories that have been encoded with an on-chip single error-correcting code along each row of memory cells. Specifically, the effects of single-cell soft errors and various hardware failures (single-cell, row, column, row-column, and entire chip) in the presence of soft-error scrubbing are examined. An expression is presented for computing the mean time to failure of such memories in the presence of these types of errors using the Poisson approximation; the expression has been confirmed experimentally to accurately model the mean time to failure of memories protected by single error-correcting codes. These analyses will enable the system designer to accurately assess the improvement in mean time to failure (MTTF) achieved by the use of error-control coding.
机译:研究了沿存储器单元每一行用片上单个纠错码编码的半导体存储器的平均寿命。具体来说,研究了在存在软错误清除的情况下单单元软错误和各种硬件故障(单单元,行,列,行列和整个芯片)的影响。提出了一种表达式,用于使用泊松近似来计算在出现这些类型的错误时此类存储器的平均故障时间;该表达式已通过实验得到证实,可以准确地模拟受单个纠错码保护的存储器的平均故障时间。这些分析将使系统设计人员能够准确评估通过使用错误控制编码实现的平均故障时间(MTTF)的改善。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号