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Deposition Temperature and Thickness Effect on the Resistive Switching in BiFeO3 Films

机译：沉积温度和厚度对BiFeO3薄膜电阻转换的影响

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摘要

Pt/BiFeO3/SrRuO3/SrTiO3 heterostructures with significant resistive switching characteristics have been successfully fabricated via magnetron sputtering, and the effect of thicknesses and deposition temperatures on the resistive switching properties has also been investigated. The resistive behaviors and conduction mechanisms can be modulated by the thickness and deposition temperatures of bismuth ferrite perovskite oxide (BFO) films. BFO films with a smaller thickness of 80 nm and higher deposition temperature of 670 degrees C show larger memory window over 1000 and lower switching voltage below 1.5 V. Moreover, the conduction mechanisms of Pt/BiFeO3/SrRuO3/SrTiO3 resistive cell change from the space charge-limited conduction model to the conductive filament type with the decrease of BFO film thickness possibly due to more oxygen vacancies and defects. Furthermore, oxygen partial pressure also influences the memory window and conduction mechanism of BFO resistive cells by increasing or decreasing the oxygen vacancy defects in BFO films.
机译：通过磁控溅射成功地制备了具有明显电阻转换特性的Pt / BiFeO3 / SrRuO3 / SrTiO3异质结构，并且研究了厚度和沉积温度对电阻转换特性的影响。电阻行为和导电机理可以通过铋铁氧体钙钛矿氧化物（BFO）膜的厚度和沉积温度来调节。 BFO膜的厚度更小，厚度为80 nm，沉积温度更高，为670摄氏度，在1000倍以上的存储窗口中显示出更大的存储窗口，而在1.5 V以下，开关电压更低。此外，Pt / BiFeO3 / SrRuO3 / SrTiO3电阻性电池的导电机制随空间变化BFO膜厚度减小的导电丝类型的电荷限制传导模型可能是由于更多的氧空位和缺陷所致。此外，氧分压还通过增加或减少BFO膜中的氧空位缺陷来影响BFO电阻性单元的存储窗口和传导机制。

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  • 来源
    《IEEE Transactions on Magnetics》 |2020年第2期|1-4|共4页
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    Huazhong Univ Sci & Technol Sch Opt & Elect Informat Wuhan 430074 Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat Wuhan 430074 Peoples R China|Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China;

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  • 正文语种 eng
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  • 关键词

    BiFeO3; deposition temperature; memory window; resistive switching; thickness;

    机译：BiFeO3;沉积温度内存窗口;电阻切换厚度;

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