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首页> 外文期刊>IEEE Transactions on Magnetics >Adjustment of Demagnetizing Field in Permalloy Nanowires to Control Domain Wall Motion
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Adjustment of Demagnetizing Field in Permalloy Nanowires to Control Domain Wall Motion

机译:调整坡莫合金纳米线的退磁场以控制畴壁运动

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摘要

The domain wall motion in permalloy nanowires has been investigated widely due to its potential for a new type of memory. In this paper. we use the LLG Simulator based on the Landau-Lifshitz-Gilbert (LLG) equation to investigate the field-driven domain-wall motion in a long, straight ferromagnetic strip. An injection field of 60 Oe is applied to inject a domain wall from an extended disk into the nanowire. We found a dependence of nanowire dimensions with the velocity of domain wall. By increasing the width of the nanowire, the velocity of the domain wall motion also increases, while the Walker breakdown field (${{rm H}_{{rm WB}}}$ ) decreases. On the other hand, increasing the thicknesses of the nanowire, the domain wall velocity, ${{rm H}_{{rm WB}}}$, and demagnetizing field all decrease. By applying a vertical field from 0 to 1000 Oe in order to enhance the demagnetizing field, it is found the ${{rm H}_{{rm WB}}}$ is increased from 16 to 20 Oe.
机译:坡莫合金纳米线中的畴壁运动已被广泛研究,这是因为其具有新型存储的潜力。在本文中。我们使用基于Landau-Lifshitz-Gilbert(LLG)方程的LLG模拟器来研究长直铁磁条中场驱动的畴壁运动。施加60 Oe的注入场,将畴壁从扩展盘注入纳米线。我们发现纳米线尺寸与畴壁的速度有关。通过增加纳米线的宽度,畴壁运动的速度也增加,而沃克击穿场($ {{rm H} _ {{rm WB}}} $)减小。另一方面,随着纳米线厚度的增加,畴壁速度$ {{rm H} _ {{rm WB}}} $和消磁场都减小。通过施加从0到1000 Oe的垂直场以增强退磁场,发现$ {{rm H} _ {{rm WB}}} $从16 Oe增加到20 Oe。

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