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首页> 外文期刊>IEEE Transactions on Magnetics >Effect of microstructure on media noise of CoCrTa thin film media fabricated under ultra clean sputtering process
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Effect of microstructure on media noise of CoCrTa thin film media fabricated under ultra clean sputtering process

机译：超净溅射工艺制备的CoCrTa薄膜介质的微观结构对介质噪声的影响

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摘要

Ultra clean sputtering process (UC-process) was introduced in the fabrication of Co/sub 85.5/Cr/sub 10.5/Ta/sub 4/Cr thin film media. Magnetic properties, microstructure and their effect on media noise are discussed against the thickness of Cr underlayer. By applying the UC-process, coercive force H/sub c/ shows high values of about 2.3 kOe isotropically until 10 nm in Cr thickness. High H/sub c/ of about 1.5 kOe remains at even 2.5 nm. UC-process is found to enable the enhancement of the formation of Cr segregated grain boundary structure, which reduces intergranular exchange coupling even in the media with 2.5 nm in Cr thickness. The ratio of readback signal to media noise S/Nm gradually increases with decreasing Cr thickness, and shows the highest value at 2.5/spl sim/5 nm. In the media with sufficiently separated grains by segregated grain boundaries, the reduction of the grain size with decreasing Cr thickness is found to be most effective for the improvement of S/Nm.
机译：在Co / sub 85.5 / Cr / sub 10.5 / Ta / sub 4 / Cr薄膜介质的制造中引入了超净溅射工艺（UC工艺）。讨论了Cr底层厚度的磁性，微观结构及其对介质噪声的影响。通过采用UC工艺，矫顽力H / sub c /在Cr厚度达到10 nm之前，各向同性显示出约2.3 kOe的高值。甚至在2.5nm处仍保持约1.5kOe的高H / sub c /。发现使用UC工艺可以增强Cr偏析晶界结构的形成，即使在Cr厚度为2.5 nm的介质中，也可以减少晶间交换耦合。随着Cr厚度的减小，回读信号与媒体噪声S / Nm的比率逐渐增加，并在2.5 / spl sim / 5 nm处显示出最大值。在具有通过偏析的晶界充分分离的晶粒的介质中，发现随着Cr厚度的减小而晶粒尺寸的减小对于提高S / Nm是最有效的。

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