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首页> 外文期刊>Magnetics, IEEE Transactions on >Control of Microstructure and Magnetic Properties of FePt Films With TiN Intermediate Layer
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Control of Microstructure and Magnetic Properties of FePt Films With TiN Intermediate Layer

机译：TiN中间层控制FePt薄膜的微观结构和磁性

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摘要

The effects of a TiN intermediate layer on the microstructure and magnetic properties of the FePt films were investigated. It was found that the TiN layer could effectively block the diffusion of Cr into the FePt film. The good epitaxial relationships among these layers were revealed from the transmission electron microscopy (TEM) results. With introducing TiN intermediate layer the chemical ordering and magnetic properties of FePt films significantly improved. The FePt film with 5 nm TiN exhibited a high perpendicular coercivity of 13.7 kOe and a low in-plane coercivity of 0.24 kOe, resulting from the combined contribution of TiN (200) orientation, TiN layer roughness and the effective block of Cr diffusion. Moreover, with doping C into the FePt-SiN$_{rm x}$ films, the out-of-plane coercivity increased due to the decrease of the exchange coupling, the grain size of FePt films decreased, and well-separated FePt grains and uniform size were formed. By optimizing the sputtering process, the [FePt (4 nm)-SiN$_{rm x}$ 40 vol$cdothbox{%}$ ]- 20 vol$cdothbox{%}$ C (001) film with coercivity higher than 21.5 kOe, a single layer structure, and small FePt grain size of 5.6 nm in average diameter was obtained, which are suitable for ultrahigh density perpendicular recording.
机译：研究了TiN中间层对FePt膜的微观结构和磁性的影响。发现TiN层可以有效地阻止Cr扩散到FePt膜中。这些层之间的良好外延关系从透射电子显微镜（TEM）结果中揭示出来。通过引入TiN中间层，FePt膜的化学有序性和磁性能得到了显着改善。 TiN为5 nm的FePt膜表现出13.7 kOe的高垂直矫顽力和0.24 kOe的低面内矫顽力，这归因于TiN（200）取向，TiN层粗糙度和有效的Cr扩散。此外，通过将C掺杂到FePt-SiN $ _ {rm x} $ 薄膜中，面外矫顽力由于交换耦合的减小而增加，FePt薄膜的晶粒尺寸减小，并且形成了分离良好的FePt晶粒和均匀的尺寸。通过优化溅射工艺，[FePt（4 nm）-SiN <分子式type =“ inline”> $ _ {rm x} $ 40 vol <分子式Formulatype =“ inline”> $ cdothbox {％} $ ]-20 vol $ cdothbox {％} $ C（001）薄膜，矫顽力高于21.5 kOe，具有单层结构，并且FePt晶粒平均直径为5.6 nm，适用于超高密度垂直记录。

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