As part of a program for the development of a space-qualified submillimeter-wave mixer operating in the region of one terahertz, the authors have developed processes for the fabrication of submicron whole-wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography they have been able to reliably fabricate high-quality (V/sub m/<20 mV) submicron tunnel junctions from whole-wafer Nb/AlO/sub x//Nb structures. In particular, it is shown that the junction quality is independent of size down to 0.3 mu m/sup 2/ junction area. The problems of film stress, anodization, registration for electron beam lithography, and lift-off, which limit the yield of good quality submicron-scale junctions are addressed.
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机译：作为开发在1太赫兹范围内运行的具有空间资格的亚毫米波混频器的计划的一部分，作者已经开发了制造亚微米全晶片隧道结的工艺。使用自对准全晶片工艺（SAWW）和电子束光刻技术，他们已经能够从全晶片Nb / AlO / sub x /可靠地制造高质量（V / sub m / <20 mV）亚微米隧道结。 / Nb结构。特别地，示出了结质量与尺寸低至0.3μm/ sup 2 /结面积无关。解决了膜应力，阳极氧化，电子束光刻配准和剥离的问题，这些问题限制了高质量亚微米级结的产量。
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