Advanced Materials for Spintronic Based on ${rm Zn}({rm Si,Ge}){rm As}_{2}$ Chalcopyrites

Fedorchenko I. V.; Kochura A. V.; Marenkin S. F.; Aronov A. N.; Koroleva L. I.; Kilanski L.; Szymczak R.; Dobrowolski W.; Ivanenko S.; L??hderanta E.

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Advanced Materials for Spintronic Based on ${rm Zn}({rm Si,Ge}){rm As}_{2}$ Chalcopyrites

机译：基于$ {rm Zn}（{rm Si，Ge}）{rm As} _ {2} $黄铜矿的自旋电子学先进材料

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${rm A}^{rm II}{rm B}^{rm IV}{rm C}_{2}^{rm V}$ semiconductors doped with Mn are perspective materials for spintronic. Structural, chemical and magnetic properties of these materials have been analyzed. The combinations of these compounds with the traditional semiconductors are perspective to create “system on chip” devices. The coexistence of ferromagnetic and paramagnetic phases was observed. The ferromagnetic phase is likely due to the presence of MnAs nanoclusters (3–5 nm). Paramagnetic properties appear due to Mn complexes (dimmer and trimmer).

机译：$ {rm A} ^ {rm II} {rm B} ^ {rm IV} {rm C} _ {2} ^ {rm V} $掺杂有Mn的半导体是自旋电子学的透视材料。对这些材料的结构，化学和磁性进行了分析。这些化合物与传统半导体的组合是创建“片上系统”设备的观点。观察到铁磁和顺磁相共存。铁磁相可能是由于存在MnAs纳米团簇（3-5 nm）。由于Mn配合物（调光剂和修整剂）而出现顺磁性。

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《Magnetics, IEEE Transactions on》 |2012年第4期|p.1581-1584|共4页
作者
Fedorchenko I. V.; Kochura A. V.; Marenkin S. F.; Aronov A. N.; Koroleva L. I.; Kilanski L.; Szymczak R.; Dobrowolski W.; Ivanenko S.; L??hderanta E.;
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Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences,, Moscow,, Russia;

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正文语种 eng
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Chalcopyrite; diluted magnetic semiconductor; ferromagnetic-semiconductor structure; spintronic;

机译：黄铜矿;稀磁半导体;铁磁半导体结构;自旋电子;

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Advanced Materials for Spintronic Based on ${rm Zn}({rm Si,Ge}){rm As}_{2}$ Chalcopyrites

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