...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Magnetics, IEEE Transactions on >Characterization of Skip or Far Track Erasure in a Side Shield Design
【24h】

Characterization of Skip or Far Track Erasure in a Side Shield Design

机译：侧屏蔽设计中的跳越或远距擦除的特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Side track erasure (STE), either skip or far track, has been studied for a PMR writer with side shielded (SS) design. Both bit error rate (BER) and noise amplitude based STE measurements indicate the side writing fields are strong at SS bottom corners and/or inner edges. With DC background low-frequency noise amplitude measurement, the root cause of the STE is characterized as flux from main pole tip going into media soft under-layer (SUL) and returning to SS bottom corners and/or inner edges. Moreover, the return flux path is identified with a unique one-sided signature depending on the pole polarity and shield initialization direction and can switch side when pole polarity or shield initialization direction is changed. By employing magnetic force microscope (MFM) analysis of a SS head under two shield initialization directions, we can explain this unique one-sided flux path by the observed SS domain structure. Furthermore, a micro-magnetic modeling of the SS design is constructed to understand the observation qualitatively.
机译：对于具有侧面屏蔽（SS）设计的PMR刻录机，已经研究了跳过或远轨的侧轨擦除（STE）。基于误码率（BER）和基于噪声幅度的STE测量均表明侧面书写区域在SS底角和/或内边缘处很强。在进行直流本底低频噪声幅度测量时，STE的根本原因是来自主磁极尖端的磁通进入介质软底层（SUL），然后返回到SS底角和/或内边缘。此外，取决于磁极极性和屏蔽初始化方向，返回磁通路径具有唯一的一侧特征，并且可以在改变磁极极性或屏蔽初始化方向时切换到一侧。通过对两个屏蔽初始化方向下的SS头​​采用磁力显微镜（MFM）分析，我们可以通过观察到的SS域结构来解释这种独特的单侧磁通路径。此外，构建了SS设计的微磁模型以定性地了解观测结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号