Fabrication and Characterization of Co-Ferrite Thin Films for a Ferromagnetic Barrier in a Spin-Filtering Device Operating at Room Temperature

Goto R.; Takahashi Y.K.; Tezuka N.; Inomata K.; Sugimoto S.; Hono K.

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Fabrication and Characterization of Co-Ferrite Thin Films for a Ferromagnetic Barrier in a Spin-Filtering Device Operating at Room Temperature

机译：室温工作的自旋过滤装置中用于铁磁阻挡层的铁素体薄膜的制备和表征

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For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed

机译：为了开发具有铁磁势垒的自旋过滤装置，可通过对沉积在MgO（001）单晶衬底上的CoFe2表面进行等离子体氧化和后退火工艺来制备非常薄的Co-铁氧体层。制作了由CoFe2 /（MgO /）Co-铁氧体/ Ta组成的自旋结，并显示了非线性J-V曲线。通过插入MgO层，观察到两个磁矩的清晰独立旋转

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来源
《IEEE Transactions on Magnetics》 |2007年第6期|p.2797-2799|共3页
作者
Goto R.; Takahashi Y.K.; Tezuka N.; Inomata K.; Sugimoto S.; Hono K.;
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正文语种 eng
中图分类磁性材料、铁氧体;计量学;
关键词
annealing; cobalt compounds; ferrites; ferromagnetic materials; magnetic moments; magnetic multilayers; magnetic thin film devices; magnetoelectronics; oxidation; plasma materials processing; 293 to 298 K; Co ferrite thin films; CoFe2; CoFe2Osu;

机译：退火;钴化合物;铁氧体;铁磁材料;磁矩;磁性多层;磁性薄膜器件;磁电子学;氧化;等离子材料处理;293至298 K;铁氧体薄膜;CoFe2;CoFe2O su;

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Fabrication and Characterization of Co-Ferrite Thin Films for a Ferromagnetic Barrier in a Spin-Filtering Device Operating at Room Temperature

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