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首页> 外文期刊>IEEE Transactions on Magnetics >Effect of Buffer Layer Annealing on the Growth of (001)-Textured MnGa Ultrathin Films With Perpendicular Magnetic Anisotropy
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Effect of Buffer Layer Annealing on the Growth of (001)-Textured MnGa Ultrathin Films With Perpendicular Magnetic Anisotropy

机译：缓冲层退火对垂直磁各向异性的（001）织构MnGa超薄膜生长的影响

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摘要

The effect of buffer layer annealing on the growth of (001)-textured 3 nm thick MnGa films with perpendicular magnetic anisotropy (PMA) was investigated. The film stacking of Si/SiO2 substrate/MgO/Cr/CoGa/MnGa was fabricated by magnetron sputtering. It was found that the CoGa buffer layer crystallized with a (001) orientation and B2 chemical ordering even without any thermal treatments. Interestingly, the 3 nm thick MnGa grown on the un-annealed CoGa buffer layer showed PMA, indicating that the CoGa buffer layer promoted the growth of (001)-textured MnGa films with L10 chemical ordering even without the annealing process. Annealing the CoGa buffer layer above 400 °C improved the (001) orientation of the CoGa buffer and MnGa layers. The effective PMA constant Kueff was about 4 Merg/cm3 without the annealing and was slightly reduced with increasing the annealing temperature, whereas the PMA dispersion was improved by the annealing. These results can help to obtain (001)-oriented MnGa ultrathin films with high PMA.
机译：研究了缓冲层退火对具有垂直磁各向异性（PMA）的（001）织构的3 nm厚MnGa薄膜的生长的影响。通过磁控溅射法制备了Si / SiO 2 衬底/ MgO / Cr / CoGa / MnGa的薄膜叠层。发现即使没有进行任何热处理，CoGa缓冲层也以（001）取向和B2化学有序地结晶。有趣的是，在未退火的CoGa缓冲层上生长的3 nm厚MnGa表现出PMA，表明CoGa缓冲层即使没有L1 0 化学排序也能促进（001）织构的MnGa膜的生长。退火过程。将CoGa缓冲层退火至400°C以上可改善CoGa缓冲层和MnGa层的（001）取向。未经退火的有效PMA常数K u eff 约为4 Merg / cm 3 ，并且随着退火温度的升高而略有降低，而通过退火改善了PMA的分散性。这些结果可以帮助获得具有高PMA的（001）取向的MnGa超薄膜。

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