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首页> 外文期刊>IEEE Transactions on Magnetics >Structural and Magnetic Properties in Mn2VAl Full-Heusler Epitaxial Thin Films
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Structural and Magnetic Properties in Mn2VAl Full-Heusler Epitaxial Thin Films

机译：Mn 2 VAl全Heusler外延薄膜的结构和磁性

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摘要

Epitaxially grown Mn2VAl full-Heusler thin films were fabricated on single crystalline MgO (001) substrates by using an ultra-high-vacuum magnetron sputtering technique. X-ray diffraction revealed that epitaxial Mn2VAl films with a highly L21 -ordered structure were obtained by annealing around 600 °C. For the films deposited without a buffer layer and annealed at 500 °C-600 °C, the saturation magnetization was about 240 emu/cm3 at 300 K, which was close to the theoretical value. The effective magnetic damping constant of Mn2VAl thin films was investigated using the ferromagnetic resonance technique. The effective damping constant was much larger than expected due to the inhomogeneity in the Mn2VAl films.
机译：利用超高真空磁控溅射技术在单晶MgO（001）衬底上制备了外延生长的Mn 2 VAl全霍斯勒薄膜。 X射线衍射表明，通过在600°C左右退火，可获得具有高L2 1 有序结构的外延Mn 2 VAl薄膜。对于没有缓冲层沉积并在500°C-600°C退火的膜，其饱和磁化强度在300 K下约为240 emu / cm 3 ，接近理论值。利用铁磁共振技术研究了Mn 2 VAl薄膜的有效磁阻尼常数。由于Mn2VAl薄膜的不均匀性，有效阻尼常数比预期的大得多。

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