An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices

Brady R. G.; Oxley C. H.; Brazil T. J.

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An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices

机译：GaN HEMT器件的一种改进的小信号参数提取算法

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摘要

A highly efficient and accurate extraction algorithm for the small-signal equivalent-circuit parameters of a GaN high electron-mobility transistor device is presented. Elements of the extrinsic equivalent-circuit topology are evaluated using a modified &#

机译：针对GaN高电子迁移率晶体管器件的小信号等效电路参数，提出了一种高效，准确的提取算法。使用修改后的＆＃评估外部等效电路拓扑的元素

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来源
《IEEE Transactions on Microwave Theory and Techniques》 |2008年第7期|p.1535-1544|共10页
作者
Brady R. G.; Oxley C. H.; Brazil T. J.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;计量学;
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2. Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices [J] . D. Godwinraj, Hemant Pardeshi, Sudhansu Kumar Pati, Superlattices and microstructures . 2013,第FEBa期

机译：基于极化的电荷密度漏极电流和纳米AlInGaN / AlN / GaN HEMT器件的小信号模型
3. Small-signal model parameter extraction of E-mode N-polar GaN MOS-HEMT using optimization algorithms and its comparison [J] . D. K. Panda, G. Amarnath, T. R. Lenka Journal of Semiconductors . 2018,第7期

机译：优化算法及其比较E-Mode N极GaN MOS-HEMT的小信号模型参数提取及其比较
4. An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs [C] . Hengshuang Zhang, Yang Lu, Ziyue Zhao, China International Forum on Solid State Lighting;International Forum on Wide Bandgap Semiconductors China . 2017

机译：GaN基HEMT小信号特性分析的改进变温模型
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

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7. High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation [O] . Moujahed Gassoumi, Abdelhamid Helali, Malek Gassoumi, 2018

机译：SIO2 / SIN钝化Algan / GaN Hemts的高频分析和小信号建模
8. MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES. [R] . Yang, R. 2017

机译：GaN-ON-siC和GaN-ON-DIamOND高电子迁移率晶体管（HEmT）器件中声子传输的测量。

An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices

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