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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Multilayer Design Techniques for Extremely Miniaturized CMOS Microwave and Millimeter-Wave Distributed Passive Circuits
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Multilayer Design Techniques for Extremely Miniaturized CMOS Microwave and Millimeter-Wave Distributed Passive Circuits

机译：极小型化CMOS微波和毫米波分布式无源电路的多层设计技术

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摘要

Multilayer design techniques are investigated for reducing the size and enhancing the performance of microwave and millimeter-wave distributed circuits in CMOS. Various distributed passive circuits are implemented in a standard 0.25-mum RF/mixed-signal process, including a novel broadside-coupled Lange coupler, a microstrip ring hybrid, and a hairpin resonator incorporating a complementary slow-wave structure. The broadside-coupled Lange coupler exhibits -3.3 to -3.35 dB through, -3.3 to -3.7 dB coupling, more than 12-dB isolation, and 15-dB return loss across 25-35 GHz while occupying only 217 times185 mum of chip area. The multilayer ring hybrid has -3.1 to -3.18 dB through, -5.1 to -5.7 dB coupling, and more than 17-dB isolation and 10-dB return loss from 25-35 GHz while occupying 282 times314 mum. A slow-wave structure based on multilayer complementary design principle is implemented for hairpin resonators. The measured quality factor of the multilayer complementary slow-wave hairpin resonator increases to about 14.5 from 11.3 for a similar sized resonator with a single-layer slow-wave structure, while retaining similar size-reduction properties as the latter
机译：研究了多层设计技术，以减小CMOS中微波和毫米波分布式电路的尺寸并增强其性能。各种分布式无源电路均以标准的0.25微米RF /混合信号工艺实现，包括新颖的宽边耦合兰格耦合器，微带环形混合器和结合了互补慢波结构的发夹式谐振器。宽边耦合的Lange耦合器通过-3.3至-3.35 dB，通过-3.3至-3.7 dB耦合，隔离度超过12dB，在25-35 GHz范围内具有15dB的回波损耗，而仅占用217倍的芯片面积185毫米。多层环形混合电路具有-3.1至-3.18 dB的直通，-5.1至-5.7 dB的耦合，在25-35 GHz范围内具有超过17dB的隔离度和10dB的回波损耗，同时占用了282倍的314妈妈。基于发夹谐振器的基于多层互补设计原理的慢波结构被实现。对于具有单层慢波结构的类似尺寸的谐振器，测得的多层互补慢波发夹形谐振器的品质因数从11.3提高到约14.5，同时保留了与后者相似的尺寸减小特性

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