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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques
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Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques

机译:通过基于六端口技术的源极-拉力和多谐波负载-拉力测量来自动表征HF功率晶体管

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摘要

An original measurement system for nonlinear microwave power-transistor characterization using six-port reflectometers is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). An appropriate search algorithm enables automatic optimization of the output impedances and leads to fast user-friendly operation of the system. Experimental results are shown for a commercial GaAs MESFET power transistor at f/sub 0/=2 GHz.
机译:提出了一种使用六端口反射仪表征非线性微波功率晶体管特性的原始测量系统。它允许对f / sub 0 /和2f / sub 0 /(多谐波负载牵引)处的输出阻抗进行独立的主动调谐,并允许输入端口f / sub 0 /(源牵引)处源阻抗的变化。适当的搜索算法可以自动优化输出阻抗,并导致系统的快速用户友好操作。显示了在f / sub 0 / = 2 GHz时商用GaAs MESFET功率晶体管的实验结果。

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