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首页> 外文期刊>IEEE transactions on nanotechnology >Scanning Spreading Resistance Microscopy for Doping Profile in Saddle-Fin Devices
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Scanning Spreading Resistance Microscopy for Doping Profile in Saddle-Fin Devices

机译：扫描扩展电阻显微镜的鞍鳍器件中的掺杂分布

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摘要

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) are used to investigate the doping profile of saddle-fin (S-fin) devices in a 30-nm dynamic-random-access-memory (DRAM) technology. Due to the limited resolution of SCM, SCM cannot provide a clear doping profile of an S-fin array device. In the meantime, SSRM and focused ion beam milling during sample preparation provide an opportunity to obtain a 2-D and scanning line doping profile. The common-source region between two adjacent buried word lines is treated with an additional phosphorus (P) implantation with energy and dosage modification to have a doping profile modification in the array devices of DRAM product. With condition of the medium energy and high dosage in this additional P implantation, the row hammer effect of 30-nm DRAM could be minimized by the localized shielding effect from the electric field by a depletion effect. The junction profile of the additional P implantation is about 10 nm deeper than that of the control sample, as verified by SSRM and technology computer-aided design simulation. The experimental results of the doping profile can be used to support a mechanism of improvement of row hammer. The SSRM methodology proposed in this study could be used to optimize the doping profiles in DRAMs for future scaling technology.
机译：扫描电容显微镜（SCM）和扫描扩展电阻显微镜（SSRM）用于研究30纳米动态随机存取存储器（DRAM）技术中的鞍鳍（S-fin）器件的掺杂分布。由于SCM的分辨率有限，SCM无法提供S-fin阵列设备的清晰掺杂轮廓。同时，在样品制备过程中，SSRM和聚焦离子束铣削提供了获得二维和扫描线掺杂分布的机会。两个相邻掩埋字线之间的共源区用能量和剂量修改的附加磷（P）注入处理，以在DRAM产品的阵列器件中具有掺杂轮廓修改。在此附加的P注入中具有中等能量和高剂量的条件下，通过耗尽效应对电场的局部屏蔽效应可以使30 nm DRAM的行锤效应最小化。通过SSRM和技术计算机辅助设计仿真的验证，额外的P注入的结轮廓比对照样品的结轮廓深约10 nm。掺杂分布的实验结果可用于支持改进排锤的机理。这项研究中提出的SSRM方法可用于优化DRAM中的掺杂分布，以用于将来的扩展技术。

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