High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

G. Darbandy; M. Claus; M. Schröter

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High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

机译：基于简化器件设计的高性能可重构Si纳米线场效应晶体管

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摘要

Reconfigurable field-effect transistors (RFETs) are of interest as devices for dynamically switching between n- and p-type polarity which enables different logic computations using the same hardware. So far, RFETs have been realized with one or even two program gates for accomplishing reconfigurability. This paper presents an RFET design with just on a silicon nanowire channel. Based on measured and device simulation data of a double-gate (DG) RFET, it is shown that the proposed simplified single-gate (SG) RFET achieves the same functionality and dc characteristics as the more complex DG-RFET. Besides reducing the wiring for the program gate(s), the SG-RFET has the additional advantage of being scalable to smaller channel length and thus achieving higher operating speed.

机译：作为可在n型和p型极性之间动态切换的设备，可重配置的场效应晶体管（RFET）引起了人们的兴趣，这可使用相同的硬件进行不同的逻辑计算。到目前为止，已经实现了具有一个或什至两个程序门的RFET，以实现可重构性。本文提出了仅在硅纳米线通道上的RFET设计。根据双栅极（R）RFET的测量和设备仿真数据，可以看出，所提出的简化的单栅极（R）RFET具有与更复杂的DG-RFET相同的功能和直流特性。 SG-RFET除了减少用于编程门的布线外，还具有可扩展至更小的沟道长度并因此实现更高的工作速度的额外优势。

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来源
《IEEE transactions on nanotechnology》 |2016年第2期|289-294|共6页
作者
G. Darbandy; M. Claus; M. Schröter;
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作者单位

Ghader Darbandy is Chair for Electron Devices and Integrated Circuits, Department of Electrical and Computer Engineering, Technical University Dresden, 01062 Dresden, Germany.;

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正文语种 eng
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关键词
RFET; Reconfigurable/Reprogrammable transistor; Reconfigurable/reprogrammable transistor; Schottky Barrier Source/Drain; Schottky barrier source/drain; Si nanowire;

机译：RFET;可重配置/可重编程晶体管;可重配置/可重编程晶体管;肖特基势垒源极/漏极;肖特基势垒源极/漏极;Si纳米线;

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High-Performance Reconfigurable Si Nanowire Field-Effect Transistor Based on Simplified Device Design

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