首页> 外国专利> PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR DEVICE IMPLEMENTED ON A NETWORK OF VERTICAL NANOWIRES, THE RESULTING TRANSISTOR DEVICE, AN ELECTRONIC DEVICE COMPRISING SUCH TRANSISTOR DEVICES AND A PROCESSOR COMPRISING AT LEAST ONE SUCH DEVICE

PROCESS FOR FABRICATING A FIELD-EFFECT TRANSISTOR DEVICE IMPLEMENTED ON A NETWORK OF VERTICAL NANOWIRES, THE RESULTING TRANSISTOR DEVICE, AN ELECTRONIC DEVICE COMPRISING SUCH TRANSISTOR DEVICES AND A PROCESSOR COMPRISING AT LEAST ONE SUCH DEVICE

机译：制造在垂直纳米线网络上实现的场效应晶体管器件，产生的晶体管器件，包括这种晶体管器件的电子器件以及至少包含一个这样的器件的处理器的过程

页面导航

摘要
著录项
相似文献

摘要

A process for fabricating a field-effect transistor device (20) implemented on a network of vertical nanowires (24), includes: producing a source electrode (26) and a drain electrode (30) at each end of each nanowire (24) symmetrically relative to the gate electrode of each elementary transistor implemented on a nanowire; creating a gate electrode by depositing a layer (38) of conductive material around a layer (36) of dielectric material that surrounds a portion of each nanowire (24), a single conductive layer (38) being used for all of the nanowires and the thickness of the conductive layer corresponding to the gate length of the transistor device; and insulating each electrode with a planar layer (32, 34) of a dielectric material in order to form a nanoscale gate and in order to insulate the contacts of each elementary transistor between the gate and the source and the gate and the drain.

机译：一种在垂直纳米线（24）的网络上实施的场效应晶体管器件（20）的制造方法，包括：在每条纳米线（24）的各端对称地产生源电极（26）和漏电极（30）。相对于在纳米线上实现的每个基本晶体管的栅电极;通过在围绕每个纳米线（24）一部分的介电材料层（36）周围沉积一层导电材料（38）来创建栅电极，单个导电层（38）用于所有纳米线，并且导电层的厚度对应于晶体管器件的栅极长度;并用介电材料的平面层（32、34）使每个电极绝缘，以形成纳米级的栅极，并使栅极和源极之间以及栅极和漏极之间的每个基本晶体管的触点绝缘。

著录项

公开/公告号EP2643848A2

专利类型
公开/公告日2013-10-02

原文格式PDF
申请/专利权人 CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.);
展开▼

申请/专利号EP20110790940
发明设计人 LARRIEU GUILHEM;
展开▼

申请日2011-11-24
分类号H01L21/335;H01L29/06;H01L29/423;H01L29/775;B82Y40/00;B82Y10/00;H01L21/8232;H01L29/739;
国家 EP
入库时间 2022-08-21 16:28:48

相似文献

专利
外文文献
中文文献