首页> 外文期刊>IEEE transactions on nanotechnology >Simulating NBTI Degradation in Arbitrary Stressed Analog/ Mixed-Signal Environments
【24h】

Simulating NBTI Degradation in Arbitrary Stressed Analog/ Mixed-Signal Environments

机译:在任意应力模拟/混合信号环境中模拟NBTI降级

获取原文
获取原文并翻译 | 示例
           

摘要

A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
机译:通过以简单的方式迭代求解RD方程,提出了紧凑的负偏压温度不稳定性(NBTI)模型。新的紧凑模型可以处理任意应力条件,而无需求解耗时的方程式,因此适用于类似SPICE的环境中的模拟/混合信号NBTI仿真。该模型已在带有Verilog-A的Cadence ADE中实现,并且还考虑了老化的随机影响。与经典RD模型相比,仿真速度至少提高了1000倍。该模型的性能已通过RD理论解决方案和140 nm CMOS硅测量得到了验证。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号