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首页> 外文期刊>Nanotechnology, IEEE Transactions on >Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
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Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs

机译：量子约束对超薄型GeOI和InGaAs-OI n-MOSFET的亚阈值摆幅和静电完整性的影响

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摘要

This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrödinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made.
机译：本文使用经TCAD验证的Schrödinger方程的导出解析解决方案，研究了考虑量子约束（QC）的超薄绝缘体（UTB）绝缘体上锗（GeOI）和InGaAs-OI n-MOSFET的静电完整性（EI）数值模拟。尽管由于高的通道介电常数，高迁移率通道器件的电子传导路径可以远离前门界面，但我们的研究表明，量子约束效应可以使载流子质心移向前门，因此可以改善亚阈值摆幅（ UTB设备的SS）。由于InGaAs，Ge和Si通道由于不同的量化有效质量而表现出不同程度的量子约束，因此，当在UTB InGaAs-OI，GeOI和SOI MOSFET的一对一比较中，必须考虑量子约束的影响。达到亚阈值摆幅和静电完整性。

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