Circuit Level Modeling of Extra Combinational Delays in SRAM-Based FPGAs Due to Transient Ionizing Radiation

著录项

• 来源
  《Nuclear Science, IEEE Transactions on》 |2014年第6期|3535-3542|共8页
• 作者

  Darvishi M.; Audet Y.; Blaquiere Y.; Thibeault C.; Pichette S.; Tazi F.Z.;

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• 作者单位

  Electrical Engineering Department, École Polytechnique, Montreal, Canada;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Delays; Field programmable gate arrays; Integrated circuit interconnections; Integrated circuit modeling; Ionizing radiation; SRAM cells; Single event upsets; Transistors; Configurable logic element; IBIS model; Input/Ouput Blocks (IOBs); SRAM-based FPGA; extra combinational delays; observed delay change (ODC); single event upset (SEU);

  机译：延迟;现场可编程门阵列;集成电路互连;集成电路建模;电离辐射;SRAM单元;单事件干扰;晶体管;可配置逻辑元件;IBIS模型;输入/输出块（IOB）;基于SRAM的FPGA;附加组合延迟;观察到的延迟变化（ODC）;单事件不正常（SEU）;