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首页> 外文期刊>IEEE Transactions on Nuclear Science >Characterization of an irradiated double-sided silicon strip detector with fast binary readout electronics in a pion beam
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Characterization of an irradiated double-sided silicon strip detector with fast binary readout electronics in a pion beam

机译：在介子束中具有快速二进制读出电子器件的辐照双面硅条检测器的特性

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摘要

We report on the characterization of an AC-coupled, double-sided silicon strip detector, with fast binary readout electronics, in a pion beam before and after proton irradiation. The proton irradiation was non-uniform and to increase the damage the detector was heated to accelerate the anti-annealing. The effective radiation level was about 1/spl times/10/sup 14/ p/cm/sup 2/. Both the bias voltage of the detector and the threshold of the discriminator of the binary readout electronics were varied, and the efficiencies were determined. The irradiated detector clearly shows the effect of bulk inversion. The binary system proved to be efficient well below the full depletion voltage on the p-n junction side. Due to the highly non-uniform irradiation, the depletion voltage changes from close to zero to about 120 V along a single strip, but the detector appears to work without any noticeable failures.
机译：我们报告质子辐照前后的离子束中具有快速二进制读出电子器件的交流耦合双面硅条检测器的特性。质子辐射不均匀，并且为了增加损坏，检测器被加热以加速抗退火。有效辐射水平约为1 / spl乘以/ 10 / sup 14 / p / cm / sup 2 /。检测器的偏置电压和二进制读出电子设备的鉴别器的阈值都发生了变化，并且确定了效率。辐照的探测器清楚地表明了体积反转的影响。事实证明，该二元系统在远低于p-n结侧的全耗尽电压的情况下是有效的。由于高度不均匀的照射，耗尽电压沿单个条带从接近零变为约120 V，但是检测器工作正常，没有任何明显的故障。

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