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首页> 外文期刊>IEEE Transactions on Power Electronics >Investigation on Ultralow Turn-off Losses Phenomenon for SiC MOSFETs With Improved Switching Model
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Investigation on Ultralow Turn-off Losses Phenomenon for SiC MOSFETs With Improved Switching Model

机译：改进开关模型的SIC MOSFET超低关断现象的研究

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摘要

Traditional SiC MOSFET switching models cannot predict the turn-OFF losses precisely in the condition of small driver resistance and small load current, because they have not considered a special case in which the SiC MOSFET closes its channel before the SiC diode turns into the freewheeling-state during turn-OFF transient. To solve this problem, this article presents an improved SiC MOSFET turn-OFF model that considers the special case. The parasitic elements of circuit and the nonlinear characteristics of SiC MOSFET are also included in the proposed model to improve its accuracy. Experimental results show that the improved model can predict the turn-OFF transient of SiC MOSFET precisely. Moreover, the investigation of turn-OFF behavior shows that SiC MOSFET can achieve ultralow turn-OFF loss in the special case, because the channel current of SiC MOSFET can fall to 0 before the drain-source voltage rises to a high value. Driver resistance and load current are the decisive factors of achieving the special case, and this article gives the criterion of them. Besides, further studies show that lower common-source inductance, larger drain-source capacitance ofMOSFET, and larger capacitance of diode can help to achieve ultralow turn-OFF loss. Experiments are carried out and the experimental results verify the analysis results.
机译：传统的SIC MOSFET开关模型无法在小型驱动器电阻和小负载电流的情况下精确地预测关闭损耗，因为它们不考虑SIC MOSFET在SIC二极管转入续流之前关闭其通道的特殊情况 - 在关断瞬态期间的状态。要解决此问题，本文提出了一种改进的SIC MOSFET关闭模型，其考虑了特殊情况。电路的寄生元件和SiC MOSFET的非线性特性也包括在所提出的模型中，以提高其精度。实验结果表明，改进的模型可以精确地预测SiC MOSFET的关断瞬态。此外，关断行为的调查表明，SiC MOSFET可以在特殊情况下实现超级开关损耗，因为SiC MOSFET的通道电流可以在漏极源电压上升到高值之前落到0。驾驶员电阻和负载电流是实现特殊情况的决定性因素，本文给出了它们的标准。此外，进一步的研究表明，较低的公共电感，较大的漏极源电容，二极管的较大电容可以有助于实现超级开关损耗。进行实验，实验结果验证了分析结果。

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