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首页> 外文期刊>IEEE Transactions on Reliability >Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins
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Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins

机译：GaAs和Al / sub 0.3 / Ga / sub 0.7 / As栅极分子的低温分子束外延生长MISFET的热稳定性

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摘要

GaAs and Al/sub 0.3/Ga/sub 0.7/As epilayers grown at LT by MBE were used as insulators in the fabrication of MISFET devices. Parametric changes were used to evaluate the thermal stability of MISFET, to identify failure mechanisms and validate the reliability of these devices. The LT-Al/sub 0.3/Ga/sub 0.7/As MISFET showed superior thermal stability. The degradation in the performance of MISFET with 1000 /spl Aring/ thick LT-GaAs gate insulator was worse than those of the MESFET. On the other hand, MISFET with 250 /spl Aring/ thick LT-GaAs gate insulators exhibited stable characteristics with thermal stressing, LF (low frequency) noise studies on the TLM structures of MISFET layers exhibited 1/f noise in the LT-Al/sub 0.3/Ga/sub 0.7/As samples and 250 /spl Aring/ LT-GaAs samples; whereas the 1000 /spl Aring/ thick LT-GaAs samples exhibited 1/f/sup 3/2/ noise, which was attributed to: (i) the thermal noise generated at the interface of the insulator, and (ii) the active layer due to the outdiffused metallic arsenic. Reverse gate-drain current degradation experiments were carried out at 120/spl deg/C, 160/spl deg/C, 200/spl deg/C, and 240/spl deg/C. Transconductance frequency dispersion studies were carried out before and after thermal stress on these MISFET. The transconductance of MISFET with 1000 /spl Aring/ LT-GaAs gate insulators was degraded by 40% at 100 kHz after thermal stress. The rest of the samples exhibited stable characteristics. These results indicate that composition changes had occurred at the interface in thicker LT-GaAs MISFET structures. Thinner LT-layers are ideal for achieving higher transconductance and better thermal stability without sacrificing the power capability of MISFET.
机译：MBE在LT处生长的GaAs和Al / sub 0.3 / Ga / sub 0.7 / As外延层被用作制造MISFET器件的绝缘体。参数更改用于评估MISFET的热稳定性，确定故障机制并验证这些器件的可靠性。 LT-Al / sub 0.3 / Ga / sub 0.7 / As MISFET显示出卓越的热稳定性。带有1000 / spl Aring /厚LT-GaAs栅极绝缘体的MISFET的性能下降比MESFET的性能恶化更严重。另一方面，具有250 / spl Aring /厚LT-GaAs栅极绝缘体的MISFET在热应力作用下表现出稳定的特性，对MISFET层的TLM结构进行的LF（低频）噪声研究在LT-Al /亚0.3 / Ga /亚0.7 / As样品和250 / spl Aring / LT-GaAs样品;而1000个/ spl Aring /厚LT-GaAs样品表现出1 / f / sup 3/2 /噪声，这归因于：（i）在绝缘子界面处产生的热噪声，以及（ii）有源层由于金属砷扩散。在120 / spl℃/℃，160 / spl℃/℃，200 / spl℃/℃和240 / spl℃/℃下进行反向栅漏电流降解实验。在这些MISFET的热应力之前和之后进行跨导频率色散研究。在热应力作用下，在100 kHz下，具有1000 / spl Aring / LT-GaAs栅极绝缘体的MISFET的跨导降低了40％。其余样品显示出稳定的特性。这些结果表明，在较厚的LT-GaAs MISFET结构的界面处发生了成分变化。较薄的LT层是实现更高的跨导和更好的热稳定性而不牺牲MISFET功率能力的理想选择。

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